Specific Process Knowledge/Etch/DryEtchProcessing: Difference between revisions

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== Hardware and option comparison of the dry etchers at Danchip ==
= Techniques, hardware and challenges common to all dry etch tools =


{| border="2" cellspacing="0" cellpadding="0" align="center"
This page contains information that is common to dry etch instruments.
! colspan="2" style="background:silver; color:black" |
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/RIE_(Reactive_Ion_Etch)| RIE2]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/AOE_(Advanced_Oxide_Etch)| AOE]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasus]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]]
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
|- valign="top"
! rowspan="2" style="background:silver; color:black" width="60" |Purpose
! style="background:WhiteSmoke; color:black" | Primary uses
| style="background:WhiteSmoke; color:black"| The RIE chamber for etching of:
* silicon
* silicon oxides/nitrides
The users are allowed to have 5% metal exposed to the plasma
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers may also be etched
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides
| style="background:WhiteSmoke; color:black"| Silicon etching
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs


|- valign="top"
{|  border ="0" align="left" valign="top"
! style="background:lightgrey; color:black" | Alternative/backup uses
! style="background:LightGray"| Dry etch page
| style="background:lightgrey; color:black" | Shallow silicon etches
! style="background:#DCDCDC;"|Description
| style="background:lightgrey; color:black" | Backup silicon etcher
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" | Barc etch
| style="background:lightgrey; color:black" | Silicon etcher
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" |
 
|- valign="top"
! rowspan="7" style="background:silver; color:black" | General description
! style="background:WhiteSmoke; color:black" | Plasma source
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
 
 
|-valign="top"
! style="background:lightgrey; color:black" | Substrate cooling/temperature
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: 0<sup>o</sup>C to 50<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C
 
|-valign="top"
! style="background:WhiteSmoke; color:black" | Clamping
| style="background:WhiteSmoke; color:black" | No clamping
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | No clamping
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers)
 
|-valign="top"
! style="background:lightgrey; color:black" | Gasses
| style="background:lightgrey; color:black" |  
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| CF<sub>4</sub>
|-
|-
| N<sub>2</sub>
| style="background: LightGray"| [[/Comparison| Hardware comparison]]
| Ar
| style="background:#DCDCDC;"| Comparison of the different hardware setups
| CHF<sub>3</sub>
|}
| style="background:lightgrey; color:black" |  
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
|-
| Ar
| style="background: LightGray"| [[/Bonding| Using carrier wafer]]
| CO<sub>2</sub>
| style="background: #DCDCDC"| Processing different sizes of substrates by using a carriers: bonding or not bonding
|}
| style="background:lightgrey; color:black" |  
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
|-
| H<sub>2</sub>
| style="background: LightGray"| [[/OES| Optical Endpoint System]]
| CF<sub>4</sub>
| style="background: #DCDCDC"| Using the OES technique to find endpoints and to diagnose plasmas
| He
|}
|style="background:lightgrey; color:black" |  
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
|-
| Ar
| style="background: LightGray"| [[/LEP| LASER Endpoint System]]
|}
| style="background: #DCDCDC"| Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers)
| style="background:lightgrey; color:black" |  
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| C<sub>4</sub>F<sub>8</sub>
|-
|-
| Ar
| style="background: LightGray"| [[/Data4dryetch| Etch product volatility]]
| CF<sub>4</sub>
| style="background: #DCDCDC"| Links to various tables with data on etch product volatility
| H<sub>2</sub>
|-
| CH<sub>4</sub>
| BCl<sub>3</sub>
| Cl<sub>2</sub>
|-
| HBr
|}
| style="background:lightgrey; color:black" |  
{|
| O<sub>2</sub>
| CHF<sub>3</sub>
| CH<sub>4</sub>
|-
| Ar
| H<sub>2</sub>
|}
| style="background:lightgrey; color:black" |
{|
| SF<sub>6</sub>
| O<sub>2</sub>
| CF<sub>4</sub>
|-
| Ar
| CH<sub>4</sub>
| H<sub>2</sub>
|-
| HBr
| BCl<sub>3</sub>
| Cl<sub>2</sub>
|}
 
|-valign="top"
!  style="background:WhiteSmoke; color:black" | RF generators
| style="background:WhiteSmoke; color:black" | 
* RF generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
* Low frequency platen generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* RF generator
|  style="background:WhiteSmoke; color:black" |
* Coil generator
* Platen generator
 
|-valign="top"
! style="background:lightgrey; color:black" | Substrate loading
| style="background:lightgrey; color:black" | Loading via cluster 2 load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock or via atmospheric cassette loader
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Manual loading directly into process chamber
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
 
|-valign="top"
!  style="background:WhiteSmoke; color:black" | Options
| style="background:WhiteSmoke; color:black" | Optical endpoint detector at fixed wavelength
| style="background:WhiteSmoke; color:black" |
* Bosch multiplexing
* Parameter ramping
|  style="background:WhiteSmoke; color:black" |
|  style="background:WhiteSmoke; color:black" |
* Bosch multiplexing
* Parameter ramping
* SOI option
* Optical endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Parameter ramping
* Optical endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Laser endpoint detection
|  style="background:WhiteSmoke; color:black" |  
* Parameter ramping
* Bosch multiplexing
* Optical endpoint detection
* Laser endpoint detection
|-valign="top"
! style="background:silver; color:black"| Allowed materials
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
* GaAs, GaN, InP, with epitaxial layers
| style="background:lightgrey; color:black" |
* Silicon
* Fused silica
* Sapphire
* SiC
* GaAs, GaN, InP, with epitaxial layers
|-
|-
|}
|}

Latest revision as of 11:50, 3 February 2023

Feedback to this page: click here

Techniques, hardware and challenges common to all dry etch tools

This page contains information that is common to dry etch instruments.

Dry etch page Description
Hardware comparison Comparison of the different hardware setups
Using carrier wafer Processing different sizes of substrates by using a carriers: bonding or not bonding
Optical Endpoint System Using the OES technique to find endpoints and to diagnose plasmas
LASER Endpoint System Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers)
Etch product volatility Links to various tables with data on etch product volatility
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