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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


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== Deposition of Silver ==
== Deposition of silver ==
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.


== Sputter deposition of silver ==


* [[Specific Process Knowledge/Thin film deposition/Lesker |Sputter deposition of Silver in Lesker]].


== Sputter deposition of Silver ==
== Thermal deposition of silver ==
 
* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]]  
* [[/Sputter rates for Ag PVD co-sputter/evaporation|Sputter deposition of Silver in PVD so-sputter/evaporation]].
<br>
* [[/Sputter Ag in Wordentec|Sputter deposition of Silver in Wordentec]].
<br>
 
== Thermal deposition of Silver ==
 
* [[/Deposition of Silver|Thermal deposition of Silver in Wordentec]]  
 
 


==Comparison of Deposition Equipment for Silver==
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"


!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
 
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| E-beam deposition of Ag
| E-beam deposition of Ag (line-of-sight, very good thickness uniformity)
| Thermal deposition of Ag
| Thermal deposition of Ag (line-of-sight)
| E-beam deposition of Ag
| Sputter deposition of Ag (some step coverage)
| E-beam deposition of Ag
| Sputter deposition of Ag including pulsed DC and HiPIMS
| Sputter deposition of Ag
| Sputter deposition of Ag
| Sputter deposition of Ag
 
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Pre-clean
! Pre-clean
|RF Ar clean
| Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
| none
|RF Ar clean
| RF Ar clean  
|
| RF Ar clean  
|RF Ar clean  
|RF Ar clean  
|RF Ar clean
 
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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! Layer thickness
! Layer thickness
|10Å to 1µm*
|10Å to 1µm*
|10Å to 0.5µm (0.5µm not on all wafers)
|10Å to 0.5µm **
|10Å to 1000Å
|10Å to about 2000Å  
|10Å to 2000Å  
|10Å to ?
|10Å to about 5000Å
|10Å to about 3000Å
|10Å to about 1000Å
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|1Å/s to 10 Å/s
|About 1Å/s
|1 to 10Å/s
|1 to 10Å/s
|Dependent on [[/Sputter rates for Ag PVD co-sputter/evaporation|process parameters]].
|5Å/s
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
|Dependent on process parameters.
|Dependent on process parameters.
|Dependent on process parameters.
|-
|-
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! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers or
*Up to 3x8" wafers
or
*smaller pieces
*smaller pieces
|
|
*6x6" wafers or
*Up to 1x8" wafer or 1x6" wafer
*6x4" wafers or
*Up to 3x4" wafers
*24x2" wafers
*smaller pieces
|
*4x6" wafers or
*12x4" wafers or
*12x2" wafers
|
*4x6" wafers or
*12x4" wafers or
*12x2" wafers
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
 
|
*6x6" wafers or
*6x4" wafers or
*24x2" wafers
 
|
|
*1x6" wafers or
*1x6" wafers or
*1x4" wafers or
*1x4" wafers or
*smaller pieces
*smaller pieces
|
*up to 10x6" wafers or
*up to 10x4" wafers or
*many smaller pieces


|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
!Allowed materials
!Allowed materials
|
|
* Silicon
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* III-V materials
*Almost any as long as it does not outgas. See cross-contamination sheet in Labmanager.
* Silicon wafers
* Quartz wafers
* Pyrex wafers
 
 
|
|
* Silicon
* Almost any that do not degas. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet]
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|-style="background:whitesmoke; color:black"
|-style="background:whitesmoke; color:black"
! Comment
! Comment
|
| Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage.
|Only very thin layers.
| Pumpdown approx 15 min.
|Only very thin layers (up to 100nm).
|Load and transfer < 10 minutes
|
|Load and transfer approx. 12 minutes
|
|
|
|-
|-
|}
|}


'''*''' ''For thicknesses above 200 nm permission is required.''
'''*''' ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''
 
'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''
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