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'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Physimeca click here]'''  
{{cc-nanolab}}
 
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Physimeca click here]'''  


[[Category: Equipment|Thin film Physimeca]]
[[Category: Equipment|Thin film Physimeca]]
[[Category: Thin Film Deposition|Physimeca]]
[[Category: Thin Film Deposition|Physimeca]]
'''<span style="color:Red">The Physimeca has been decomissioned and is no longer available.</span>'''


== Physimeca ==
== Physimeca ==
[[image:Physimeca.jpg|430x430px|right|thumb|The Physicmeca, placed in the III-V laboratory, cleanroom A-5.]]
[[image:Physimeca.jpg|430x430px|right|thumb|The Physicmeca, Located in cleanroom B-1.]]
 
Physimeca is a system for deposition of metals through electron-beam evaporation, intended for III-V processing.


Physimeca is a system for deposition of metals through electron-beam evaporation.




Wafers are loaded into the system through the load lock and transferred into the deposition chamber. Physimeca allows you to deposit metals on samples of different sizes and shapes. It will also take samples of almost any shape as long as they can fit on the sample holders; there are three different sample holders, one for chips (arbitrary size), one for 2" wafers and one for 4" wafers. The sample holder can be tilted during deposition, but is normally kept in a horizontal orientation.
Wafers are loaded into the system through the load lock and transferred into the deposition chamber. Physimeca allows you to deposit metals on samples up to 4 inch wafer. There are three different sample holders, one for chips (arbitrary size), one for 2" wafers and one for 4" wafers. The sample holder can be tilted during deposition, but is normally kept in a horizontal orientation.


Six different metals are present at each time in the Physimeca. The metal combination is changed if needed. A list of currently allowed metals is included in the table below; contact the ThinFilm team (thinfilm@danchip.dtu.dk) if you have wishes for other metals.
Six different metals are present at each time in the Physimeca. The metal combination is changed if needed. A list of currently allowed metals is included in the table below; contact the ThinFilm team (Metal@nanolab.dtu.dk) if you have wishes for other metals.
   
   


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[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=151 Physimeca in LabManager]
[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=151 Physimeca in LabManager]
 
<br>
 
<br>
<br clear="all" />
 
 
==Equipment performance and process related parameters Physimeca==
==Equipment performance and process related parameters Physimeca==


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|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
*10 Å - 5000 Å*
*10 Å - 5000 Å*
|-
|-
|style="background:LightGrey; color:black"|Available metals and deposition rates (Å/s)
|style="background:LightGrey; color:black"|Available metals and deposition rates (Å/s)
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*Silver (Ag)
*Silver (Ag)
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|  
|style="background:WhiteSmoke; color:black"|  
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|style="background:WhiteSmoke; color:black"|  
|style="background:WhiteSmoke; color:black"|  
* 2x10<sup>-6</sup> mbar
* 2x10<sup>-6</sup> mbar
|-
|style="background:LightGrey; color:black"|Distance between e-beam and substrate
|style="background:WhiteSmoke; color:black"|
* 46 cm
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Sample size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*2 or 4" wafers
*one 2" or 4" wafers
*Or several smaller pieces
*Or several smaller pieces


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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*III-V materials
*III-V materials
*Si
|-  
|-  
| style="background:LightGrey; color:black"|Materials allowed on the substrate
| style="background:LightGrey; color:black"|Materials allowed on the substrate
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|}
|}


'''*''' ''For thicknesses above 2000 Å special permission is required (contact thinfilm@danchip.dtu.dk).''
'''*''' ''For thicknesses above 2000 Å special permission is required (contact thinfilm@nanolab.dtu.dk).''
 
==Calibration of Physimeca (''experienced users only'')==
 
As of 16/6/2008, we will use a new system to compensate for "drift" without having to change e.g. 20 gold programs for each refilling.
The power setting during deposition is a fraction of the "auto-emission current" on the genius system.
In order to compensate for drift in the system the auto and max emission current on the genius is adjusted to achieve the rates at the set powers below
This way it should not be necessary to adjust the programs every time, but experienced users will have to occasionally adjust the genius setting.
 
{| border="2" cellspacing="0" cellpadding="4"
| rowspan=2 |Reference deposition (step)
| rowspan=2 |Material
| rowspan=2 |Pocket
| rowspan=2 |Rate (Å/s)
| rowspan=2 |At power (%)
| colspan="2" align="center"| Example of max emission current (6-2008)
|-
| mA
| ~mA for rate
|-
| Ti100nm-5A-cal
| Ti
| 1
| 5
| 70
| 160
| 112
|-
| Pt100nm-5A-cal
| Pt
| 2
| 5
| 80
| 460
| 368
|-
| Au100nm-10A-cal
| Au
| 3
| 10
| 80
| 450
| 360
|-
| Ni100nm-5A-cal
| Ni
| 4
| 5
| 70
| 250
| 175
|-
| Ge100nm-5A-cal
| Ge
| 5
| 5
| 70
| 190
| 133
|-
| Cr100nm-5A-cal
| Cr
| 6
| 5
| 70
| 110
| 77
|-
| Pd100nm-5A-cal
| Pd
| 6
| 5
| 70
| 160
| 112
|-
|}
 
The tooling factor has been determined to ~110 for 100nm layers (lot, 6-2008). It will of course have a small dependence on material and rate.
 
You can use the steps above as starting point when making new programs (other thicknesses, rates, tilt etc.)
 
== Changing Auto and Emission Current (''experienced users only'') ==
If the actual power during deposition is significantly different than the target value (e.g. off by a few % you may change the genius values).
 
Calculate new auto emission current: Inew="good" current during deposition / target power, e.g. 167mA/0.7 = 240mA (new max emission)


== [[/Physimeca_calibration|Calibration of Physimeca]] '' - for experienced users only'' ==
# Use genius remote:
# Switch to manual mode.
# Switch to chosen material
# Go to set data and down to auto emission and max emission .
# Change both to the new value and note this in the user log.
# Go to save/load and save values
# Switch back to remote mode on genius.
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