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[[Category: Equipment |Furnace]]
''This page is written by DTU Nanolab  internal''
[[Category: Thermal process|Furnace]]
[[index.php?title=Category:Equipment|Thermal A2]]
[[Category: Furnaces|A2]]
[[index.php?title=Category:Thermal process|Furnace]]
[[index.php?title=Category:Furnaces|A2]]
==Gate Oxide furnace (A2)==
[[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1.''Photo: DTU Nanolab internal'']]
 
The Gate Oxide furnace (A2) is a Tempress horizontal furnace for dry oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is a very thin og clean thermal oxide layer located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor).


==Gate Oxide furnace (A2)==
Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.  
[[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1]]


The Gate Oxide furnace (A2) is a Tempress horizontal furnace for growing gate oxide and for oxidation of other very clean silicon wafers.  
This furnace is the second upper furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contamination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.  


This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.


'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''
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*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page


==Overview of the performance of the Gate Oxide furnace and some process related parameters==
==Overview of the performance of the Gate Oxide furnace and some process related parameters==
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!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
*Oxidation of silicon (for very clean gate oxide layers)
Oxidation of silicon wafers (e.g. gate oxide layers)
|style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:WhiteSmoke; color:black"|Oxidation:
*Dry  
*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub>
|-
|-
!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness and quality
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (it takes too long to grow a thicker oxide)
*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers)
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A2 furnace break-down voltage measurement results|Break-down voltage measurement results]]
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*800-1150 <sup>o</sup>C
*800 <sup>o</sup>C - 1150 <sup>o</sup>C
|-
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 atm
*1 atm (no vacuum)
|-
|-
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gases on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub>
*N<sub>2</sub>
Line 53: Line 58:
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-30 100 mm wafers (or 50 mm wafers) per run
*1-30 100 mm wafers (or 50 mm wafers)
|-
|-
| style="background:LightGrey; color:black"|Substrate materials allowed
| style="background:LightGrey; color:black"|Substrate materials allowed

Latest revision as of 13:48, 16 September 2025

Feedback to this page: click here

This page is written by DTU Nanolab internal Thermal A2 Furnace A2

Gate Oxide furnace (A2)

Gate Oxide furnace (A2). Positioned in cleanroom B-1.Photo: DTU Nanolab internal

The Gate Oxide furnace (A2) is a Tempress horizontal furnace for dry oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is a very thin og clean thermal oxide layer located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor).

Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.

This furnace is the second upper furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contamination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.


The user manual, technical information and contact information can be found in LabManager:

Gate Oxide furnace (A2)

Process knowledge


Overview of the performance of the Gate Oxide furnace and some process related parameters

Purpose

Oxidation of silicon wafers (e.g. gate oxide layers)

Oxidation:
  • Dry oxidation using O2. Reaction: Si + O2 -> SiO2
Performance Film thickness and quality
Process parameter range Process Temperature
  • 800 oC - 1150 oC
Process pressure
  • 1 atm (no vacuum)
Gases on the system
  • N2
  • O2
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers)
Substrate materials allowed
  • Silicon wafers (RCA cleaned) without metal bulk contamination
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