Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions

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{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="90%"
|-


|-
<br>
|-style="background:silver; color:black"
 
|'''Resist'''
 
|'''Polarity'''
mrEBL6000 works as a negative e-beam resist but is also UV sensitive, why resist and coated wafers should be kept in yellow rooms only. When carrying the wafers to the e-beam writer, use a black or blue box for protection. While mounting the wafers in the e-beam cassettes, you can turn off the white light in the e-beam room and turn on the yellow light which is located above the pre-aligner setup. Please mount as close to exposure as possible and turn of the with light outside the room and place a note on the door not to turn on light while the cassette is in the stocker.
|'''Manufacturer'''
 
|'''Comments'''
mrEBL6000 is a chemically amplified resist, i.e. immediately after e-beam exposure, the wafers require a post-exposure bake. If no post-exposure bake is performed, the resist is not crosslinked and will most likely dissolve during development.
|'''Technical reports'''
|'''Spinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''


|-
This resist can be used as standard negative resist at Nanolab, but due to limited use, we often need to buy a new bottle, hence please ask long time (up to 3 months) in advance for this chemical. or by it yourself!
<br>
<br>
<br>


|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]'''
|Positive
|[http://http://www.microresist.de/home_en.htm MicroResist]
|Standard negative resist
|[[media:mrEBL6000 Processing Guidelines.pdf‎|mrEBL6000 processing Guidelines.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
|mr DEV
|IPA
|mr REM
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]
|}


== 3 week project on mrEBL6000 by William Tiddi ==


== Process Flow ==
mrEBL6000 was studied April 2015 by William Tiddi; the report can be found [[media:Report (2).pdf|here‎]].
Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
|-


|-
<br>
|-style="background:Black; color:White"
<br>
!Equipment
!Process Parameters
!Comments
|-


|-
== Spin Curve ==
|-style="background:WhiteSmoke; color:black; text-align:center"
[[File:image001.png|right|600px]]
!colspan="4"|Pretreatment
|-


The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.


|-
9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
|-style="background:LightGrey; color:black"
|4" Si wafers
|1 min @ 110 degC, hotplate
|
|-


|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Spin Coat
|-




|-
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 30%"
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|mr EBL 6000.1 E-beam resist
60 sec at various spin speed.
Acceleration 2000 s-2,
softbake 3 min at 110 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice.
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
|-style="background:#0048BA; color:White"
!colspan="4"|Characterization
!colspan="3"|MicroResist mr EBL 6000. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
|Ellipsometer VASE B-1
!Spin Speed [rpm]
|9 points measured on 100 mm wafer
!Thickness [nm]
|ZEP program used; measured at 70 deg only
!St Dev
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
|-style="background:WhiteSmoke; color:black"
!colspan="4"|E-beam Exposure
|2000
|103
|0.5
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
|JEOL 9500 E-beam writer, E-1
|3000
|Dosepattern 15nm - 100nm,
|88
dose 120-280 muC/cm2
|0.4
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
|-style="background:WhiteSmoke; color:black"
!colspan="4"|Development
|4000
|78
|0.4
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
|Fumehood, D-3
|5000
|60 sec in
|71
60 sec rinse in IPA,
|0.7
N2 Blow dry
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
|-style="background:WhiteSmoker; color:black"
!colspan="4"|Characterization
|6000
|68
|0.5
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoker; color:black"
|Zeiss SEM Supra 60VP, D-3
|7000
|2-3 kV, shortest working distance possible, chip mounted with Al tape
|66
|The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
|0.6
|-
|-


|}
|}


 
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 30%"
 
== Spin Curve ==
[[File:SpinCurveMrEBL6000.jpg|right|600px]]
 
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
 
 
 
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 40%"
|-
|-


|-
|-
|-style="background:Black; color:White"
|-style="background:#E30022; color:White"
!colspan="7"|MicroResist mr EBL 6000 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 14-07-2014. Softbake 3 min @ 110 degC.
!colspan="3"|MicroResist mr EBL 6000 diluted 1:1 in anisole. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Spin Speed [rpm]
!Spin Speed [rpm]
!Acceleration [1/s2]
!Thickness [nm]
!Thickness [nm]
!St Dev
!St Dev
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|2000
|2000
|2000
|50
|101.93
|0.2
|0.81
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|3000
|3000
|2000
|42
|87.19
|0.5
|0.77
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|4000
|4000
|2000
|38
|76.88
|0.5
|0.5
|-
|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|5000
|5000
|2000
|34
|71.18
|0.3
|0.57
|-
|-


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|-style="background:WhiteSmoker; color:black"
|-style="background:WhiteSmoker; color:black"
|6000
|6000
|2000
|32
|69.12
|0.3
|0.53
|-
|-


|-
|-style="background:WhiteSmoker; color:black"
|7000
|32
|0.3
|-
|}
|}
<br>
<br>
==Contrast Curve==
The contrast curve is measured on lines 100 nm in width, exposed with doses in the range of 6-63 µC/cm2. After exposure, the sample has been post-exposure baked 5 min @ 110 degree C. Development is performed with mr-DEV 600 in 40s followed by an IPA rinse 60s.
These measurements are performed by WILTID April 2015.
[[File:mrEBL_contrast.png|right|500px]]
<br>
<br>
[[File:mrEBL_doses6_33.png|left|600px]]
<br>
<br>

Latest revision as of 12:17, 20 August 2021



mrEBL6000 works as a negative e-beam resist but is also UV sensitive, why resist and coated wafers should be kept in yellow rooms only. When carrying the wafers to the e-beam writer, use a black or blue box for protection. While mounting the wafers in the e-beam cassettes, you can turn off the white light in the e-beam room and turn on the yellow light which is located above the pre-aligner setup. Please mount as close to exposure as possible and turn of the with light outside the room and place a note on the door not to turn on light while the cassette is in the stocker.

mrEBL6000 is a chemically amplified resist, i.e. immediately after e-beam exposure, the wafers require a post-exposure bake. If no post-exposure bake is performed, the resist is not crosslinked and will most likely dissolve during development.

This resist can be used as standard negative resist at Nanolab, but due to limited use, we often need to buy a new bottle, hence please ask long time (up to 3 months) in advance for this chemical. or by it yourself!



3 week project on mrEBL6000 by William Tiddi

mrEBL6000 was studied April 2015 by William Tiddi; the report can be found here‎.




Spin Curve

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.

9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.


MicroResist mr EBL 6000. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
Spin Speed [rpm] Thickness [nm] St Dev
2000 103 0.5
3000 88 0.4
4000 78 0.4
5000 71 0.7
6000 68 0.5
7000 66 0.6
MicroResist mr EBL 6000 diluted 1:1 in anisole. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
Spin Speed [rpm] Thickness [nm] St Dev
2000 50 0.2
3000 42 0.5
4000 38 0.5
5000 34 0.3
6000 32 0.3
7000 32 0.3



Contrast Curve

The contrast curve is measured on lines 100 nm in width, exposed with doses in the range of 6-63 µC/cm2. After exposure, the sample has been post-exposure baked 5 min @ 110 degree C. Development is performed with mr-DEV 600 in 40s followed by an IPA rinse 60s. These measurements are performed by WILTID April 2015.






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