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{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="90%"
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|-style="background:silver; color:black"
 
|'''Resist'''
 
|'''Polarity'''
mrEBL6000 works as a negative e-beam resist but is also UV sensitive, why resist and coated wafers should be kept in yellow rooms only. When carrying the wafers to the e-beam writer, use a black or blue box for protection. While mounting the wafers in the e-beam cassettes, you can turn off the white light in the e-beam room and turn on the yellow light which is located above the pre-aligner setup. Please mount as close to exposure as possible and turn of the with light outside the room and place a note on the door not to turn on light while the cassette is in the stocker.
|'''Manufacturer'''
 
|'''Comments'''
mrEBL6000 is a chemically amplified resist, i.e. immediately after e-beam exposure, the wafers require a post-exposure bake. If no post-exposure bake is performed, the resist is not crosslinked and will most likely dissolve during development.
|'''Technical reports'''
|'''Spinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''


|-
This resist can be used as standard negative resist at Nanolab, but due to limited use, we often need to buy a new bottle, hence please ask long time (up to 3 months) in advance for this chemical. or by it yourself!
<br>
<br>
<br>


|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000]]'''
|Positive
|[http://http://www.microresist.de/home_en.htm MicroResist]
|Standard negative resist
|[[media:mrEBL6000 Processing Guidelines.pdf‎|mrEBL6000 processing Guidelines.pdf‎]]
|[[Specific_Process_Knowledge/Lithography/Coaters#Manual Spinner 1|Manual Spinner 1 (Laurell)]], [[Specific_Process_Knowledge/Lithography/Coaters#Spin_coater:_Manual_Labspin|Spin Coater Labspin]]
|mr DEV
|IPA
|
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]
|}


== 3 week project on mrEBL6000 by William Tiddi ==


== Process Flow ==
mrEBL6000 was studied April 2015 by William Tiddi; the report can be found [[media:Report (2).pdf|here‎]].
Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
|-


|-
<br>
|-style="background:Black; color:White"
<br>
!Equipment
!Process Parameters
!Comments
|-


|-
== Spin Curve ==
|-style="background:WhiteSmoke; color:black; text-align:center"
[[File:image001.png|right|600px]]
!colspan="4"|Pretreatment
|-


The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only.


|-
9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
|-style="background:LightGrey; color:black"
|4" Si wafers
|1 min @ 110 degC, hotplate
|
|-


|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Spin Coat
|-




|-
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 30%"
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|mr EBL 6000.1 E-beam resist
60 sec at various spin speed.
Acceleration 2000 s-2,
softbake 3 min at 110 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice.
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
|-style="background:#0048BA; color:White"
!colspan="4"|Characterization
!colspan="3"|MicroResist mr EBL 6000. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
|Ellipsometer VASE B-1
!Spin Speed [rpm]
|9 points measured on 100 mm wafer
!Thickness [nm]
|ZEP program used; measured at 70 deg only
!St Dev
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
|-style="background:WhiteSmoke; color:black"
!colspan="4"|E-beam Exposure
|2000
|103
|0.5
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
|JEOL 9500 E-beam writer, E-1
|3000
|Dosepattern 15nm - 100nm,
|88
dose 120-280 muC/cm2
|0.4
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
|-style="background:WhiteSmoke; color:black"
!colspan="4"|Development
|4000
|78
|0.4
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
|Fumehood, D-3
|5000
|60 sec in
|71
60 sec rinse in IPA,
|0.7
N2 Blow dry
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
|-style="background:WhiteSmoker; color:black"
!colspan="4"|Characterization
|6000
|68
|0.5
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoker; color:black"
|Zeiss SEM Supra 60VP, D-3
|7000
|2-3 kV, shortest working distance possible, chip mounted with Al tape
|66
|The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
|0.6
|-
|-


|}
|}


== Spin Curve ==
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 30%"
[[File:SpinCurveMrEBL6000.jpg|right|600px]]
 
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.
 
 
 
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 40%"
|-
|-


|-
|-
|-style="background:Black; color:White"
|-style="background:#E30022; color:White"
!colspan="7"|MicroResist mr EBL 6000 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 14-07-2014. Softbake 3 min @ 110 degC.
!colspan="3"|MicroResist mr EBL 6000 diluted 1:1 in anisole. Spin coated on Spin Coater: Manual LabSpin A-5, WILTID, 2015. Softbake 3 min @ 110 degC.
|-
|-


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|-style="background:WhiteSmoke; color:black"
!Spin Speed [rpm]
!Spin Speed [rpm]
!Acceleration [1/s2]
!Thickness [nm]
!Thickness [nm]
!St Dev
!St Dev
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|2000
|2000
|2000
|50
|
|0.2
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|3000
|3000
|2000
|42
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|0.5
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|4000
|4000
|2000
|38
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|0.5
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|5000
|5000
|2000
|34
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|0.3
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|6000
|6000
|2000
|32
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|0.3
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|-
|-style="background:WhiteSmoker; color:black"
|7000
|32
|0.3
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|}
|}
<br>
<br>
==Contrast Curve==
The contrast curve is measured on lines 100 nm in width, exposed with doses in the range of 6-63 µC/cm2. After exposure, the sample has been post-exposure baked 5 min @ 110 degree C. Development is performed with mr-DEV 600 in 40s followed by an IPA rinse 60s.
These measurements are performed by WILTID April 2015.
[[File:mrEBL_contrast.png|right|500px]]
<br>
<br>
[[File:mrEBL_doses6_33.png|left|600px]]
<br>
<br>
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/mrEBL6000"