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These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.




== Process Flow ==
Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
|-


|-
Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact [mailto:lithography@nanolab.dtu.dk lithography] at DTU Nanolab.
|-style="background:Black; color:White"
!Equipment
!Process Parameters
!Comments
|-


|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Pretreatment
|-
|-
|-style="background:LightGrey; color:black"
|4" Si wafers
|No Pretreatment
|
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Spin Coat
|-
|-
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|AR-P 6200/2 AllResist E-beam resist
60 sec at various spin speed.
Acceleration 4000 s-2,
softbake 1 - 5 min at 150 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf|here]].
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Characterization
|-
|-
|-style="background:LightGrey; color:black"
|Ellipsometer VASE B-1
|9 points measured on 100 mm wafer
|ZEP program used; measured at 70 deg only
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|E-beam Exposure
|-
|-
|-style="background:LightGrey; color:black"
|JEOL 9500 E-beam writer, E-1
|Dosepattern 15nm - 100nm,
dose 120-280 muC/cm2
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Development
|-
|-
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|60 sec in X AR 600-54/6,
60 sec rinse in IPA,
N2 Blow dry
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
|-
|-
|-style="background:WhiteSmoke; color:black; text-align:center"
!colspan="4"|Characterization
|-
|-
|-style="background:LightGrey; color:black"
|Zeiss SEM Supra 60VP, D-3
|2 kV, shortest working distance possible, chip mounted with Al tape
|The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk|Ramona Valentina Mateiu] for further information.
|-
|}


== Spin Curves ==
== Spin Curves ==




[[File:SpinCurveCSAR.jpg|right|600px]]
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.  


The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.  
Around 2 ml of resist per wafer has been used when fabricating these curves. If you use less than 2 ml, the thickness of the final resist might be smaller than reported here.




<span style="color:#696969">'''Dosepattern has been e-beam exposured and SEM inspected on those wafers marked by silver gray.'''</span>
[[File:CSAR_09.png|right|600px]]
[[File:CSAR_18.png|right|600px]]




Line 114: Line 23:


|-
|-
|-style="background:Black; color:White"
|-style="background:#00308F; color:White"
!colspan="7"|AllResist AR-P 6200/2 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
!colspan="7"|AllResist AR-P 6200.09 (> 2ml per 4" wafer) spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:silver; color:black"
!Spin Speed [rpm]
!Spin Speed [rpm]
!Acceleration [1/s2]
!Acceleration [1/s2]
!Thickness [nm]
!Thickness [nm]
!St Dev
|-
|-


Line 130: Line 38:
|2000
|2000
|4000
|4000
|225.98
|226
|0.97
|-
|-


Line 138: Line 45:
|3000
|3000
|4000
|4000
|194.00
|194
|0.6
|-
|-


Line 146: Line 52:
|4000
|4000
|4000
|4000
|169.57
|170
|0.32
|-
|-


Line 154: Line 59:
|5000
|5000
|4000
|4000
|151.47
|151
|0.26
|-
|-


|-
|-
|-style="background:Silver; color:black"
|-style="background:WhiteSmoke; color:black"
|6000
|6000
|4000
|4000
|142.38
|142
|0.41
|-
|-


Line 170: Line 73:
|7000
|7000
|4000
|4000
|126.59
|127
|0.36
|-
|-


Line 182: Line 84:


|-
|-
|-style="background:green; color:White"
|-style="background:red; color:White"
!colspan="7"|AllResist CSAR on Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
!colspan="7"|AllResist CSAR 6200.09 1:1 in anisole (< 2ml per 4" wafer), Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
|-
|-


Line 191: Line 93:
!Acceleration [1/s2]
!Acceleration [1/s2]
!Thickness [nm]
!Thickness [nm]
!St Dev
|-
 
|-
|-style="background:WhiteSmoke; color:black"
|2000
|4000
|84
|-
|-


Line 198: Line 106:
|3000
|3000
|4000
|4000
|201.61
|67
|1.20
|-
|-


Line 206: Line 113:
|4000
|4000
|4000
|4000
|173.89
|59
|0.64
|-
|-


Line 214: Line 120:
|5000
|5000
|4000
|4000
|155.91
|53
|0.65
|-
 
|-
|-style="background:WhiteSmoke; color:black"
|6000
|4000
|49
|-
|-


Line 226: Line 138:


|-
|-
|-style="background:red; color:White"
|-style="background:green; color:White"
!colspan="7"|AllResist CSAR 1:1 in anisole, Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
!colspan="7"|AllResist CSAR 6200.18 (< 2ml per 4" wafer), Spin Coater: Manual Standard Resists, E-5, TIGRE, 15-06-2016. Softbake 2 min @ 180 degC.
|-
|-


Line 235: Line 147:
!Acceleration [1/s2]
!Acceleration [1/s2]
!Thickness [nm]
!Thickness [nm]
!St Dev
|-
|-


Line 241: Line 152:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|2000
|2000
|4000
|2000
|83.48
|1003
|0.49
|-
|-


Line 249: Line 159:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|3000
|3000
|4000
|2000
|67.12
|809
|0.41
|-
|-


Line 257: Line 166:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|4000
|4000
|4000
|2000
|58.64
|721
|0.44
|-
|-


|-
|-
|-style="background:Silver; color:black"
|-style="background:WhiteSmoke; color:black"
|5000
|5000
|4000
|2000
|53.13
|639
|0.39
|-
|-


Line 273: Line 180:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|6000
|6000
|4000
|2000
|48.76
|586
|0.38
|-
 
|-
|-style="background:WhiteSmoke; color:black"
|7000
|2000
|549
|-
|-


|}
|}


<br>
<br>
<br>


== Contrast Curve ==


== SEM pictures of dosepatterns ==
=== CSAR 6200.09 ===


100 nm lines in both ~70 nm and ~188 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature to provide the following contrast curves.


=== 53 nm CSAR ===
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 95%"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
|-
|-


|-
|-
|-style="background:Black; text-align:left; color:White"
|-style="background:Black; color:White"
!Process
!colspan="5"|CSAR Contrast Curve, Processed by TIGRE, FEB-MARCH 2016
!Equipment
!Parameters
!Date and initials
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Resist
!Resist
|Fumehood D-3
!Spin Coat
|AR-P 6200/2 AllResist E-beam resist diluted 1:1 in anisole
!E-beam exposure
|16-06-2014 TIGRE
!Development
!Characterisation
|-
|-


|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Spin Coat
|CSAR AR-P6200.09 AllResist, CSAR AR-P6200.09 diluted 1:1 in Anisole
|Spin Coater LabSpin A-5
|08-02-2016, LabSpin E-5, 4000 rpm, 60s, softbaked 60s @ 205 degC
|1 min @ 5000 rpm, 4000 1/s2, softbake 2 min @ 150 degC, thickness ~53nm
|09-02-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
|16-06-2014 TIGRE
|11-02-2016, Fumehood D-2, AR-600-546, rinsed in IPA 60s.
|02-03-2016 AFM Icon, F-2, ScanAsyst in Air
|-
|-


|}
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
|-
|-style="background:WhiteSmoke; color:black"
| [[image:ContrastCurvesCSAR_March2016_log.png|600px]]
|E-beam exposure
|-  
|JEOL 9500 E-2
| colspan="1" style="text-align:center;|
|0.2 nA, aperture 5, dose 207-242 muC/cm2, SHOT A,10
AR-P 6200 contrast curves.
|02-07-2014 TIGRE
|}
 
==Dose to size==
Small features need a comparatively higher dose then big features and hence it can be useful to map out the dose and size dependency. Below is a set of cross sectional images of 100, 50 and 20 nm lines written 500, 250 and 180 nm resist at doses from 200 to 600 µC/cm<sup>2</sup>.
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
|-
| [[image:thope240214_lines_100_06.png|1200px]]
|-
| [[image:thope240214_lines_50_11.png|1200px]]
|-
| [[image:thope240214_lines_20_13.png|1200px]]
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 500 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}


{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:thope240214_lines250_100nm.png|1200px]]
|-
| [[image:thope240214_lines250_50nm.png|1200px]]
|-
| [[image:thope240214_lines250_20nm.png|1200px]]
|-
| colspan="1" style="text-align:center;|
Cross section SEM images of 250 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}


{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
|-
|-style="background:WhiteSmoke; color:black"
| [[image:thope240214_lines180_100_29.png|1200px]]
|Develop
|-  
|Fumehood D-3
| [[image:thope240214_lines180_50_31.png|1200px]]
|SX-AR 600-54/6 60 sec, 60 sec IPA rinse
|-
|08-07-2014 TIGRE
| [[image:thope240214_lines180_20_33.png|1200px]]
|-  
| colspan="1" style="text-align:center;|
Cross section SEM images of 180 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
|}
 
=== CSAR 6200.18 ===
 
100 nm lines in ~900 nm thick CSAR has been developed with AR-600-546 (standard CSAR developer) at room temperature.
 
[[File:CSAR 6200.18 developed with AR600546.png|right|400px]]
 
{|border="1" cellspacing="0" cellpadding="3" style="text-align:right;"  style="width: 60%"
|-
|-


|-
|-style="background:Black; color:White"
!colspan="5"|CSAR Contrast Curve, Processed by TIGRE, JUNE 2016
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Sputter Coat
!Resist
|Cressington 208HR, DTU CEN
!Spin Coat
|3-5 nm Pt, sputtering
!E-beam exposure
|09-07-2014 TIGRE
!Development
!Characterisation
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Characterization
|CSAR AR-P6200.18 AllResist
|Zeiss SEM Supra 60VP, D-3
|15-06-2016, LabSpin E-5, 2000 rpm, 60s, softbaked 60s @ 205 degC
|3 kV, WD below 4mm, conducting tape close to pattern
|15-06-2016, JBX9500 E-2, 2nA aperture 5, doses 40-600 µC/cm2, 100 nm lines and 300 nm spaces
|09-07-2014, TIGRE
|16-06-2016, Fumehood E-4, AR-600-546, 30s/60s/90s, rinsed in IPA 60s.
|JUNE/JULY 2016 SEM Supra 2, 10 keV
|-
|-


|}
|}


<br clear="all"/>


'''50nm'''


{| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable"
=== Dark Erosion ===
! width="100" | dose [muC/cm2]
! width="250" | 230
! width="250" | 230
! width="250" | 230
! width="250" | 230
! width="250" | 230
|-
|
| [[File:53nmCSAR50nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR50nmLinesBasedose.png|250px]]
| [[File:53nmCSAR50nmHolesBasedose.png|250px]]
| [[File:53nmCSAR50nmPillarsBasedose.png|250px]]
| [[File:53nmCSAR50nmTestBasedose.png|250px]]
|-


Dark erosion has been measured on a un-exposed 4" wafer spin coated with CSAR 6200.18 to a thickness of approximately 549 nm. The resist thickness has been measured by VASE Ellipsometer before development, and after 3 minutes, 13 minutes, and 30 minutes of development in AR 600 546.


|}
The graphs shows the measured thicknesses; the errorbars represents the standard deviations from the ellipsometric measurements. The average etch rate of CSAR is ~0.1 nm/min.


[[File:dark erosion.png|right|400px]]


'''30nm'''


{| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable"
! width="100" | dose [muC/cm2]
! width="250" | 219
! width="250" | 230
! width="250" | 242
|-
|
| [[File:53nmCSAR30nmOverviewBasedose-5%.png|250px]]
| [[File:53nmCSAR30nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR30nmOverviewBasedose+5%.png|250px]]
|-
|
| [[File:53nmCSAR30nmLinesBasedose-5%.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose+5%.png|250px]]


|}
<br clear="all" />


== Development ==


'''20nm'''
Many resists can be developed in different developers, CSAR can be developed in: AR 600-546, AR 600-548, ZED N-50 and mix of MIBK and IPA among others.  
 
{| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable"
! width="100" | dose [muC/cm2]
! width="250" | 207
! width="250" | 219
! width="250" | 230
! width="250" | 242
! width="250" | 253
|-  
|
| [[File:53nmCSAR20nmOverviewBasedose-10%.png|250px]]
| [[File:53nmCSAR20nmOverviewBasedose-5%.png|250px]]
| [[File:53nmCSAR20nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR20nmOverviewBasedose+5%.png|250px]]
| [[File:53nmCSAR20nmOverviewBasedose+10%.png|250px]]
|-
|
|
|
| [[File:53nmCSAR20nmLinesBasedose.png|250px]]
| [[File:53nmCSAR20nmLines2Basedose+5%.png|250px]]
| [[File:53nmCSAR20nmLinesBasedose+10%.png|250px]]
|-


CSAR and ZEP520A are in principle the same chemical, however the pretreatment (filtration and temperature control) can differ.


|}
Some users have reported residues and residual layers when using ZED N-50 on CSAR and vice verca, hence we recommend to use AR 600-546 or AR 600-548 (3 times stronger) to develop CSAR and not ZED N-50.


When this is said some users still observe residues when using AR 600-546, the producer "'''All resist GMBH'''" have recommended to use 3-5s, dip in pure MIBK to remove residues.
AR 600 546 will dissolve different plastic materials, hence never use it on PS compounds.


'''15nm'''
<br clear="all"/>


{| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable"
== Etch Tests ==
! width="100" | dose [muC/cm2]
! width="250" | 242
! width="250" | 253
! width="250" | 276
|-
|
| [[File:53nmCSAR15nmOverviewBasedose+5%.png|250px]]
| [[File:53nmCSAR15nmOverviewBasedose+10%.png|250px]]
| [[File:53nmCSAR15nmOverviewBasedose+20%.png|250px]]
|-
|
| [[File:53nmCSAR15nmLinesBasedose+5%.png|250px]]
| [[File:53nmCSAR15nmLinesBasedose+10%.png|250px]]
| [[File:53nmCSAR15nmLinesBasedose+20%.png|250px]]


|}
If you have wafers or chips with CSAR you would like to have tested, please send me an [[mailto:tigre@danchip.dtu.dk email]].


=== Chlorine versus flourine-based etches ===


We have experienced problems with removal of CSAR after chlorine-based dry etch, see the file [[:File:DryEtchTestsCSAR.pdf]]. It seems the chlorine etch forms particles of chlorinated CSAR on the surface, and these particles remains on the surface after resist removal with AR-600-71. The C4F8/SF6 etch also forms particles on the surface, but much smaller than those formed in the chlorine etch. It seems these particles are removed after 3 minutes in AR-600-71.


=== 140 nm CSAR ===
=== How to mount chips in dry etch tools ===


All etch rates presented here are measured on chips (i.e. diced 4" wafers) crystal bonded to a carrier. The carrier is either a blank Si wafer, a Si wafer spin coated with resist or a Si wafer coated with ALD grown Al2O3.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 40%;"
|-
|+style="background:Black; color:White"  colspan="4"|'''Etch Tests of CSAR, recipe 'nano1.42', DRIE PEGASUS, A-1. CSAR thickness measured on Ellipsometer VASE at 70 degrees'''
|-
|-
|-
 
!rowspan="1"|Sample
!colspan="1"|CSAR Etch rate nm/min
|-
|Full 4" Si wafer with non-patterned ~180 nm CSAR
|~56.5 (based on 2 runs)
|-
|-
|-style="background:Black; text-align:left; color:White"
!Process
!Equipment
!Parameters
!Date and initials
|-
|-
 
|Full 4" Si wafer with non-patterned ~240 nm CSAR, <br>postbaked 60 sec @ 130 degC
|~56.5 (based on 2 runs)
|-
|-
|-style="background:WhiteSmoke; color:black"
|Resist
|Fumehood D-3
|AR-P 6200/2 AllResist E-beam resist
|2013 (bottle opened)
|-
|-
 
|1/4 4" Si wafer with non-patterned ~125 nm CSAR, <br>not crystal bonded to Si carrier
|-style="background:WhiteSmoke; color:black"
|~83.3 (based on 3 runs)
|Spin Coat
|Spin Coater LabSpin A-5
|1 min @ 6000 rpm, 4000 1/s2, softbake 5 min @ 150 degC, thickness ~143nm
|09-04-2014 TIGRE
|-
|-
|-
|-
|-style="background:WhiteSmoke; color:black"
|1/4 4" Si wafer with non-patterned ~125 CSAR, <br>crystal bonded to 4" Si carrier
|E-beam exposure
|~54 (based on 1 run)
|JEOL 9500 E-2
|2 nA, aperture 5, dose 207-242 muC/cm2, SHOT A,10
|10-04-2014 TIGRE
|-
|-
|}
=== Etch rates and profile inspection ===
==== Continous Etches ====




{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 80%;"
|-
|+style="background:Black; color:White"  colspan="4"|'''Recipe nano1.42 on Deep Reactive Ion Etch PEGASUS A-1'''
|-
|-
|-style="background:WhiteSmoke; color:black"
|Develop
|Fumehood D-3
|SX-AR 600-54/6 60 sec, 60 sec IPA rinse
|April/May-2014 TIGRE
|-
|-
! rowspan="4" align="center"| Recipe
| Gasses
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
|rowspan="7" width="20%" | Profiles of lines exposed at 300 µC/cm2, etched 2:30 minutes (150s) with recipe 'nano1.42'
[[File:617817 HD-4_11.png|200px]] [[File:617817 HD-4_18.png|200px]]
[[File:617817 HD-4_16.png|200px]] [[File:617817 HD-4_14.png|200px]]
|-
| Pressure
| 4 mTorr,
Strike: 3 secs @ 15 mTorr


|-
| Power
| 800 W Coil Power,
40 W Platen Power


|-
|Platen temperature
| - 20°C
|-
|-
|-style="background:WhiteSmoke; color:black"
 
|Sputter Coat
! rowspan="1" align="center"| Conditions
|Cressington 208HR, DTU CEN
| Conditioning
|2-3 nm Pt, sputtering
| Pre-clean: 10 min oxygen clean
|22-05-2014 TIGRE
5 min oxygen clean between runs
|-
|-
 
! rowspan="2" align="center"| Etch rates
 
| Si
|
500 nm lines: ~200 nm/min <br>
190 nm lines: ~200 nm/min <br>
102 nm lines: ~190 nm/min <br>
61 nm lines: ~170 nm/min
|-
|-
|-style="background:WhiteSmoke; color:black"
|CSAR
|Characterization
| ~55 nm/min
|Zeiss SEM Supra 60VP, D-3
|2 kV, WD below 4mm, conducting tape close to pattern
|06-06-2014, TIGRE
|-
|-
|}
|}






'''50nm'''
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 80%;"
|-
|+style="background:Black; color:White"  colspan="4"|'''Recipe processC on Deep Reactive Ion Etch PEGASUS A-1'''
|-
|-
! rowspan="4" align="center"| Recipe
| Gasses
| C<sub>4</sub>F<sub>8</sub> 70 sccm, SF<sub>6</sub> 38 sccm
|rowspan="7" width="20%" | Profiles of lines exposed at 300 µC/cm2, etched 60s with recipe 'ProcessC'
[[File:tigre 6.17 0% 3b_ 07.png|200px]] [[File:tigre 6.17 0% 3b_ 16.png|200px]]
[[File:tigre 6.17 0% 3b_ 14.png|200px]] [[File:tigre 6.17 0% 3b_ 11.png|200px]]
|-
| Pressure
| 4 mTorr,
Strike:  secs @  mTorr


{| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable"
|-
! width="100" | dose [muC/cm2]
| Power
! width="250" | 207
| 450 W Coil Power, 100 W Platen Power
! width="250" | 219
! width="250" | 230
! width="250" | 242
|-  
|-  
|
|Platen temperature
| [[File:CSAR50nmoverview-10%.png|270px]]
| 10°C
| [[File:CSAR50nmoverview-5%.png|270px]]
|-
| [[File:CSAR50nmoverview.png|270px]]
 
| [[File:CSAR50nmoverview+5%.png|270px]]
! rowspan="1" align="center"| Conditions
|-  
| Conditioning
|
| Pre-clean: 10 min oxygen clean
| [[File:CSAR50nmlines-10%.png|270px]]
5 min oxygen clean between runs
| [[File:CSAR50nmlines-5%.png|270px]]
|-
| [[File:CSAR50nmlines.png|270px]]
! rowspan="2" align="center"| Etch rates
| [[File:CSAR50nmlines+5%.png|270px]]
| Si
|  
500 nm lines: ~300 nm/min <br>
102 nm lines: ~250 nm/min <br>


|-
|CSAR
| 158 nm/min
|-
|}
|}


==== Bosch Etch ====


'''30nm'''


{| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable"
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 80%;"
! width="100" | dose [muC/cm2]
|-
! width="250" | 207
|+style="background:Black; color:White"  colspan="4"|'''Recipe NBoost01 on Deep Reactive Ion Etch PEGASUS A-1'''
! width="250" | 219
|-
! width="250" | 230
|-
! width="250" | 242
! rowspan="13" align="center"  width ="70"| Recipe
|-
| rowspan="4"  width ="50"| Deposition step
|
|Duration
| [[File:CSAR30nmoverview-10%.png|270px]]
| width ="100" |2.5 s
| [[File:CSAR30nmoverview-5%.png|270px]]
|rowspan="16" width="20%" | Profiles of lines exposed at 300 µC/cm2, etched 6:00 minutes with recipe 'NBoost01'
| [[File:CSAR30nmoverview.png|270px]]
[[File:tigre 6.17 -15% 3a_ 11.png|200px]] [[File:tigre 6.17 3a_ 08.png|200px]]
| [[File:CSAR30nmoverview+5%.png|270px]]
[[File:tigre 6.17 3a_ 20.png|200px]] [[File:tigre 6.17 3a_ 21.png|200px]]
|-  
[[File:tigre 6.17 3a_ 22.png|200px]]
|
 
| [[File:CSAR30nmlines-10%.png|270px]]
|-
| [[File:CSAR30nmlines-5%.png|270px]]
| width ="30"| Gasses
| [[File:CSAR30nmlines.png|270px]]
|C<sub>4</sub>F<sub>8</sub> 50 sccm, SF<sub>6</sub> 0 sccm
| [[File:CSAR30nmlines+5%.png|270px]]
|-
| Pressure
|10 mTorr
|-
| Powers
|500 W Coil
|-
| rowspan="4"| Etch step (boost)
|Duration
|1.5 s
|-
| Gasses
|C<sub>4</sub>F<sub>8</sub> 0 sccm, SF<sub>6</sub> 60 sccm
|-
| Pressure
|5 mTorr
|-
| Powers
|400 W Coil, 50 W Platen
|-


|}
| rowspan="4"| Etch step (main)
 
|Duration
 
|3.5 s
'''20nm'''
|-
 
| Gasses
{| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable"
|C<sub>4</sub>F<sub>8</sub> 40 sccm, SF<sub>6</sub> 60 sccm
! width="100" | dose [muC/cm2]
|-
! width="250" | 230
| Pressure
! width="250" | 242
|15 mTorr
! width="250" | 253
|-
|-  
| Powers
|
|400 W Coil, 20 W Platen
| [[File:CSAR20nmoverview.png|280px]]
|-
| [[File:CSAR20nmoverview+5%.png|280px]]
| [[File:CSAR20nmoverview+10%.png|280px]]
|Platen temperature
|-  
|colspan="2"|20 °C
|-


! rowspan="1" align="center"| Conditions
| Conditioning
|colspan="2"| Pre-clean: 10 min oxygen clean
5 min oxygen clean between runs
|-
! rowspan="2" align="center"| Etch rates
| Si
|colspan="2"|
200 nm lines: ~700 nm/min <br>
130 nm lines: ~580 nm/min <br>


|-
|CSAR
|colspan="2"|  ~18 nm/min
|-
|}
|}
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