Specific Process Knowledge/Etch/III-V ICP/GaN: Difference between revisions

From LabAdviser
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,018 edits
Created page with "'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etc..."
 
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,018 edits
No edit summary
 
(7 intermediate revisions by 2 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaN click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/III-V_ICP/GaN click here]'''  
<!--Checked for updates on 11/2-2019 - ok/jmli -->


 
===GaN etching using III-V ICP===
===GaN etching===


{| border="1" cellspacing="2" cellpadding="3"   
{| border="1" cellspacing="2" cellpadding="3"   
|'''Recipe'''
|'''Recipe'''
|'''GaN Etch'''
|'''GaN Etch'''
|'''GaN Etch for Si check'''
|-  
|-  
|Cl<sub>2</sub> flow
|Cl<sub>2</sub> flow
|30 sccm
|30 sccm
|27 sccm
|-
|-
|Ar flow
|Ar flow
|10 sccm
|10 sccm
|3 sccm
|-
|BCl3 flow
|0 sccm
|3 sccm
|-
|-
|Platen power
|Platen power
|200 W
|200 W
|75 W
|-
|-
|Coil power
|Coil power
|600 W
|600 W
|400 W
|-  
|-  
|Pressure
|Pressure
|2 mTorr
|2 mTorr
|4 mTorr
|-
|-
|Platen chiller  temperature
|Platen chiller  temperature
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|-
|-
Line 41: Line 52:
|~ 90 <sup>o</sup>
|~ 90 <sup>o</sup>
|-
|-
|}
{| border="1" cellspacing="2" cellpadding="3"  align="left"
|colspan="2" align="center"| '''Results (GaN Etch for Si check)'''
|-
|Si etch rate
|~200 nm/min (bghe 2017-01-17) full 4" wafer
|}
|}


Line 47: Line 66:
|-  
|-  
|}
|}


{| border="1" cellspacing="2" cellpadding="3"   
{| border="1" cellspacing="2" cellpadding="3"   

Latest revision as of 14:43, 18 August 2021

Feedback to this page: click here

GaN etching using III-V ICP

Recipe GaN Etch GaN Etch for Si check
Cl2 flow 30 sccm 27 sccm
Ar flow 10 sccm 3 sccm
BCl3 flow 0 sccm 3 sccm
Platen power 200 W 75 W
Coil power 600 W 400 W
Pressure 2 mTorr 4 mTorr
Platen chiller temperature 20 oC 20 oC


Results (GaN Etch)
GaN etch rate 550-580 nm/min
SiO2 etch rate 110-120 nm/min
Sidewall angle ~ 90 o


Results (GaN Etch for Si check)
Si etch rate ~200 nm/min (bghe 2017-01-17) full 4" wafer


Result of GaN etching. Oleksii Kopylov, DTU Photonics, 2011.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/III-V_ICP/GaN&oldid=39016"