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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiV click here]'''
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Nickel Vanadium can be deposited by sputter evaporation. In the chart below you can compare the different deposition equipment.
==Sputtering of Nickel Vanadium==


Nickel Vanadium may be sputter deposited in the Sputter-system (Lesker) and the Sputter-system Metal-Oxide (PC1). The following pages show both process parameters and data on surface roughness of the deposited films:
* [[/Sputtering of NiV in Lesker|Sputtering of NiV in Sputter-System (Lesker)]]
* [[/Sputtering of NiV in Sputter-System Metal-Oxide (PC1)|Sputtering of NiV in Sputter-System Metal-Oxide (PC1)]]
* [[/Sputtering of NiV in Wordentec|Sputtering of NiV in Wordentec]] (tool now decommissioned, but results are of general interest)
In the chart below you can compare the available sputter systems:


{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
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!  
!  


! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  


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! Pre-clean
! Pre-clean


|RF Ar clean
| none
|RF Ar clean
|RF Ar clean
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness


|About 10Å to 4000Å
|About 10Å to 5000Å
|About 10Å to 5000Å
|About 10Å to 5000Å
|-
|-


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! Deposition rate
! Deposition rate


|Depending on process parameters.
|Depending on process parameters(normally less than 1 Å/s).
|Depending on process parameters.
|Depending on process parameters(normally less than 1 Å/s).


|-
|-
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! Batch size
! Batch size


|
*12x2" wafers or
*12x4" wafers or
*4x6" wafers
|
|
*Pieces or
*Pieces or
*1x4" wafer or
*1x4" wafer or
*1x6" wafer
*1x6" wafer
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Allowed substrates
! Allowed substrates
 
|  
|
* Silicon wafers
* Silicon wafers
* Quartz wafers
* Quartz wafers
* Pyrex wafers  
* Pyrex wafers(No substrate heating)
|
|
* Silicon wafers
* Almost any that do not outgas.
* Quartz wafers


|-
|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
!Allowed materials
|
 
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
* Silicon
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* Metals  
* Metals  
* Carbon
* Carbon
|
* Almost any that do not outgas.


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Target size
| 2 inch sputter target
| 3 inch sputter target
(or in special cases 4 inch)
|-
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment


| Sputter target with NiV composition: Ni/V 93/7%  
|  
| Sputter target with NiV composition: Ni/V 93/7%
*Sputter target with NiV composition: Ni/V 93/7%
*Substrate rotation
|  
*Sputter target with NiV composition: Ni/V 93/7%
*Substrate rotation
*Substrate RF Bias (optional)
*Substrate heating to 600 C
 
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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