Specific Process Knowledge/Etch/Etching of Gold: Difference between revisions

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-==Etching of Gold==
+'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
-Etching of Gold is done wet at Danchip. We have two different solutions:
-# KI:I<math>_2</math>:H<math>_2</math>O - 400g:100g:400ml?
+'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
-# HNO<math>_3</math>:HCl - 1:3
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Gold click here]'''
-===Comparing the two solutions===
+==Etching of Gold==
-{| border="1" cellspacing="0" cellpadding="4" align="left"
+Etching of Gold can be done either by wet etch, or by sputtering with ions.
-!
+*[[Specific Process Knowledge/Etch/Wet Gold Etch|Etching of Gold by wet etch]]
-! Iodine based gold etch
+*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Au etch|Sputtering of Au]]
-! Aqua Regia (Kongevand)
+<br clear="all" />
-|-
-|General description
-|
-Etch of pure Gold
-|
-Etch of pure Gold
-|-
-|Chemical solution
-|KJ:J<math>_2</math>:H<math>_2</math>O  100g:25g:500ml
-|-H<math>Cl</math>:H<math>N</math>O_3
+==Comparison of Gold Etch Methods==
-|Process temperature
+{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
-|20 <sup>o</sup>C
+|-
-|20 <sup>o</sup>C
+|-
+|-style="background:silver; color:black"
+!
+![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 1]]
+![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 2]]
+![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!Generel description
+|Wet etch of Au using iodine based chemistry
+|Wet etch of Au using Aqua Regina
+|Sputtering of Au - pure physical etch
 |-
-|Possible masking materials:
+|-
+|-style="background:LightGrey; color:black"
+!Etch rate range
 |
-Photoresist (1.5 µm AZ5214E)
+*~100nm/min
 |
-Photoresist (1.5 µm AZ5214E)
+*680 nm/min (dilute) or faster (concentrated). Mainly used for complete removal of metals
+|
+*~55nm/min (acceptance test)
 |-
-|Etch rate
+|-
+|-style="background:WhiteSmoke; color:black"
+!Etch profile
+|
+*Isotropic
 |
-~100 nm/min (Pure Al)
+*Isotropic
 |
-~60(??) nm/min
+*Anisotropic (angles sidewalls, typical around 70 dg)
 |-
-|Batch size
+|-style="background:LightGrey; color:black"
+!Masking material
+|
+*Photoresist
 |
--25 wafers at a time
+*None (mainly used for stripping Au)
 |
--25 wafer at a time
+*Any material that is allowed in the chamber, photoresists included
 |-
-|Size of substrate
+|-
+|-style="background:WhiteSmoke; color:black"
+!Substrate size
+|
+*Any size and number that can go inside the beaker in use
 |
-" wafers
+*Any size and number that can go inside the beaker in use
 |
-" wafers
+Smaller pieces glued to carrier wafer
+*<nowiki>#</nowiki>1 50mm wafer
+*<nowiki>#</nowiki>1 100mm wafer
+*<nowiki>#</nowiki>1 150mm wafer
+*<nowiki>#</nowiki>1 200mm wafer
+|-
 |-
-|Allowed materials
+|-style="background:LightGrey; color:black"
+!'''Allowed materials'''
 |
-*Aluminium
+No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
-*Silicon
+|
-*Silicon Oxide
+No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
-*Silicon Nitride
-*Silicon Oxynitride
-*Photoresist
-*E-beam resist
 |
-*Aluminium
+*Silicon
-*Silicon
+*Silicon oxides
-*Silicon Oxide
+*Silicon nitrides
-*Silicon Nitride
+*Metals from the +list
-*Silicon Oxynitride
+*Metals from the -list
-*Photoresist
+*Alloys from the above list
-*E-beam resist
+*Stainless steel
+*Glass
+*III-V materials
+*Resists
+*Polymers
+*Capton tape
 |-
 |}