Specific Process Knowledge/Thin film deposition/Deposition of Tin: Difference between revisions

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== Tin deposition ==


Tin can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
Tin can be deposited by e-beam evaporation. It was evaporated in the Alcatel e-beam evaporator, which is decommissioned, but has not yet been evaporated in the Temescal e-beam evaporator which we have now (June 2023). Please contact the Thin Film group if you would like to deposit tin.
 


{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! General description
|
| E-beam deposition of Sn
*Up to 1x4" wafers
(line-of-sight deposition)
*smaller pieces
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Pre-clean
!Pre-clean
|RF Ar clean
|Ar ion  clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|/s to 15Å/s
|/s to 10Å/s
|-
 
 
|-style="background:WhiteSmoke; color:black"
!Pre-clean
|Ar ion bombardment
 
|-style="background:LightGrey; color:black"
! Batch size
|
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*small pieces
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
!Allowed materials
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|
|
* Silicon
* Silicon
* Silicon oxide  
*Silicon oxide
* Silicon (oxy)nitride  
*Silicon (oxy)nitride
* Photoresist  
*Photoresist
* PMMA  
*PMMA
* Mylar  
*Mylar
* SU-8
*Metals
* Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Comment
! Comment
|
| Tin has not yet been deposited in the Temescal to date (May 2022).
Please contact the Thin Film group if you would like us to develop the process.
|}
|}


'''*''' ''For thicknesses above 200 nm permission is required.''
'''*''' ''For thicknesses above 600 nm permission is required.''

Latest revision as of 12:14, 13 June 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal

Tin deposition

Tin can be deposited by e-beam evaporation. It was evaporated in the Alcatel e-beam evaporator, which is decommissioned, but has not yet been evaporated in the Temescal e-beam evaporator which we have now (June 2023). Please contact the Thin Film group if you would like to deposit tin.

E-beam evaporation (Temescal)
General description E-beam deposition of Sn

(line-of-sight deposition)

Pre-clean Ar ion clean
Layer thickness 10Å to 1µm*
Deposition rate 1Å/s to 10Å/s
Pre-clean Ar ion bombardment
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • small pieces
Allowed materials
Comment Tin has not yet been deposited in the Temescal to date (May 2022).

Please contact the Thin Film group if you would like us to develop the process.

* For thicknesses above 600 nm permission is required.