Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions

← Older edit
VisualWikitext
Knil (talk | contribs)
DCH-Employees-701
420 edits
No edit summary
Reet (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,736 edits
 
(42 intermediate revisions by 5 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=/... click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=/... click here]'''


== Chromium deposition ==
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
Chromium can be deposited by e-beam evaporation. It should be noted that Chromium does not melt but evaporates directly from the solid phase. Chromium can be sputter deposited aswell. In the chart below you can compare the different deposition equipment.
 
== Studies of Cr deposition processes ==
 
[[/Roughness of Chromium|Roughness of Chromium]] - ''Roughness and Uniformity of Cr layers deposited with different methods and settings''
 
[[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates''
 
[[/Sputtering of Cr in Cluster Lesker PC1|Sputtering of Cr in Sputter-system Metal-Oxide (PC1)]] - ''Settings and deposition rates''
 
[[/Sputtering of Cr in Cluster Lesker PC3|Sputtering of Cr in Sputter-system Metal-Nitride (PC3)]] - ''Settings and deposition rates''
 
[[/Thermal evaporation of Cr in Thermal evaporator|Thermal evaporation of Cr in Thermal evaporator]] - ''Settings and deposition results''


[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature''


== Chromium deposition ==
Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
   
   
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])  
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! General description
|
|E-beam deposition of Chromium
*Up to 1x4" wafers
|Thermal deposition of Chromium
*smaller pieces
|Sputter deposition of Chromium
|
|Sputter deposition of Chromium
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
*12x2" wafers or
*12x4" wafers or
*4x6" wafers
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|RF Ar clean
|Ar ion gun (only in E-beam evaporator Temescal)
|RF Ar clean
|
|RF Ar clean
|
|RF Ar clean
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 1µm*
|10Å to 300 nm*
|10Å to 1µm*
|100 nm
|10Å to 1000 Å
|at least up to 200 nm
|.
|at least up to 200 nm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|1 Å/s to 10 Å/s
|10Å/s to 15Å/s
|1 Å/s
|About 1Å/s
|Depends on [[/Sputtering of Cr in Sputter System (Lesker)|process parameters]]. At least up to 1.48 Å/s. See process log.
|Depending on process parameters, see [[Sputtering of Cr in Wordentec|here.]]
|Depends on process parameters.
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials


! Batch size
|
|
* Silicon
*4x6" wafers or
* Silicon oxide
*3x8" wafers (ask for holder)
* Silicon (oxy)nitride
*Many smaller pieces
* Photoresist
 
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Up to *3x 4" wafers or
* Silicon oxide
*1x6" or 1x 8" wafer
* Silicon nitride
*Many smaller samples
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
|
* Silicon
*1x6" wafers
* Silicon oxide
*Smaller pieces/wafers
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
|
* Silicon
 
* Silicon oxide
*up to 10x4" wafers or
* Silicon nitride
*up to 10x6" wafers or
* Silicon (oxy)nitride
* many smaller samples
* Photoresist
 
* PMMA
* Mylar
* SU-8
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Comment
! Allowed materials
|
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
|
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
 
|
|
* Silicon wafers
* and almost any
|
|
|Only very thin layers (up to 100nm).
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Special carrier for III-V materials.
 
|-
|-style="background:WhiteSmoke; color:black"
! Comment
| Takes approx. 20 min to pump down
| Takes approx. 20 min to pump down
|
|
| Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber


|-
|-


|}  
|}  
'''*''' ''For thicknesses above 200 nm permission from ThinFilm group is required.''
'''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material and to prioritize chamber cleaning as Cr tends to be a high-stress layer and thus causes flaking,''
 
== Studies of Cr deposition processes ==
 
[[/Deposition of Chromium|Uniformity of Cr layers]] - ''Uniformity of Cr layers deposited with different methods and settings''
 
[[Sputtering of Cr in Wordentec]] - ''Settings and deposition rates''
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Chromium"