Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions
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Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. | '''Feedback to this page''': '''[mailto:wetchemistry@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF click here]''' | ||
Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details. | |||
Latest revision as of 16:21, 10 June 2025
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Feedback to this page: click here
Removal of native oxide is a part of the RCA cleaning procedure. See the RCA page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the oxide etch page for more details.