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Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions

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Is a part of the RCA cleaning procedure. This bath must only be used during the RCA cleaning procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. For removal of oxide of processed wafers the other HF/BHF bath can be used see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page.
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Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details.
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