Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions

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===Slow etch of silicon nitride with resist as masking material - with direct clamping ===
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon_nitride click here]'''
This recipe can be used for slow etching of silicon nitride with resist as masking material when normal clamping is possible. Normal clamping is prefered because it give the best and most repeatable cooling of the wafer.
<br> {{CC1}}
Here are some test results presented.
 
==Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ==
{{CC-bghe2}} <br>
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess|here]]
 
 


{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
!Parameter
!Parameter
!Resist mask
!A slow etch with carrier
|-
|-
|Coil Power [W]
|Coil Power [W]
Line 30: Line 35:
{| border="2" cellspacing="2" cellpadding="3"
{| border="2" cellspacing="2" cellpadding="3"
!Results  
!Results  
!Test on wafer with 20% load), by Izzet Yildiz @Nanotech
!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech''
!Test by BGHE @nanolab
|-
|-
|Etch rate of LPCVD nitride
|Etch rate of LPCVD nitride
|'''60-65 nm/min (20% etch load) (Feb.-2014)'''  
|'''60-65 nm/min (20% etch load) (Feb. 2014)'''  
|&nbsp;
|-
|-
|Selectivity to  resist [SiN : AZ resist]
|Selectivity to  resist [SiN : AZ resist]
|'''1:0.75'''
|'''1:0.75'''
|&nbsp;
|-
|-
|Wafer uniformity (100mm)
|Wafer uniformity (100mm)
|'''?'''
|'''?'''
|&nbsp;
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
|?
|?
|&nbsp;
|-
|-
|Wafer uniformity map (click on the image to view a larger image)
|Wafer uniformity map (click on the image to view a larger image)
|not measured  
|not measured  
|&nbsp;
|-
|-
|SEM profile images
|SEM profile images
|Not measured
|Not measured
|&nbsp;
|-
|Etch rate in Barc
|&nbsp;
|~50 nm/min (Date: 2014-09-09)
|-
|Etch rate in KRF resist
|&nbsp;
|~40 nm/min (Date: 2014-09-09)
|-
|-
|}
|}


<br/>
<br/>

Latest revision as of 16:02, 6 February 2023

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Unless otherwise stated, this page is written by DTU Nanolab internal

Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess

Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab
This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that here


Parameter A slow etch with carrier
Coil Power [W] 200
Platen Power [W] 25
Platen temperature [oC] 0
CF4 flow [sccm] 20
H2 flow [sccm] 10
Pressure [mTorr] 3


Results Test on wafer with 20% load, by Izzet Yildiz @Nanotech Test by BGHE @nanolab
Etch rate of LPCVD nitride 60-65 nm/min (20% etch load) (Feb. 2014)  
Selectivity to resist [SiN : AZ resist] 1:0.75  
Wafer uniformity (100mm) ?  
Profile [o] ?  
Wafer uniformity map (click on the image to view a larger image) not measured  
SEM profile images Not measured  
Etch rate in Barc   ~50 nm/min (Date: 2014-09-09)
Etch rate in KRF resist   ~40 nm/min (Date: 2014-09-09)


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