Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions

From LabAdviser
← Older edit
VisualWikitext
BGE (talk | contribs)
Bureaucrats, danchip, Administrators
2,908 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,018 edits
No edit summary
 
(42 intermediate revisions by 8 users not shown)
Line 1: Line 1:
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Titanium click here]'''
<!--Page reviewed by jmli 1/8-2016  -->
==Etching of Titanium==
==Etching of Titanium==
Etching of Titatium is done wet at Danchip. We have ?:


# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.
# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
*[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etching of Ti by dry etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Ti etch|Sputtering of Ti]]
<br clear="all" />


==Comparison of Titanium Etch Methodes==


===Comparing the two solutions===
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


{| border="1" cellspacing="0" cellpadding="4" align="left"
!
! Aluminium Etch 1
! Aluminium Etch 2
|-
|General description
|
Etch of pure aluminium
|
Etch of aluminium + 1.5% Si
|-
|-
|Chemical solution
|-style="background:silver; color:black"
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
!
|PES 77-19-04
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 2]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|Process temperature
|50 <sup>o</sup>C


|20 <sup>o</sup>C
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|BHF Etch of titanium with or without photoresist mask.
|Cold RCA1 mix etch of titanium (as stripper or with eagle resist).
|Dry plasma etch of Ti
|Sputtering of Ti - pure physical etch
|-


|-
|-style="background:LightGrey; color:black"
!Etch rate range
|
*~?nm/min
|
*~?nm/min
|
*~50-200 nm/min (depending on features size and etch load and recipe settings)
|
*~20nm/min
|-
|-


|Possible masking materials:
|-
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
*Isotropic
|
*Isotropic
|
|
Photoresist (1.5 µm AZ5214E)
*Anisotropic (vertical sidewalls)
|
|
Photoresist (1.5 µm AZ5214E)
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
 
 
|-
|-
|Etch rate
|-style="background:LightGrey; color:black"
!Substrate size
|
|
~100 nm/min (Pure Al)
*Any size and number that can go inside the beaker in use
|
|
~60(??) nm/min
*Any size and number that can go inside the beaker in use
|-
|Batch size
|
|
1-25 wafers at a time
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer)
*<nowiki>#</nowiki>1 150mm wafers
|
|
1-25 wafer at a time
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-
|Size of substrate
 
|-
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|
|
4" wafers
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
4" wafers
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|-
|Allowed materials
|
|
*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Aluminium
*Silicon
*Titanium
*Silicon Oxide
*Chromium
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|
|
*Aluminium
*Silicon
*Silicon
*Silicon oxides
*Silicon Oxide
*Silicon nitrides
*Silicon Nitride
*Metals from the +list
*Silicon Oxynitride
*Metals from the -list
*Photoresist
*Alloys from the above list
*E-beam resist
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}

Latest revision as of 13:36, 18 April 2024

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching of Titanium

Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Titanium Etch Methodes

Ti wet etch 1 Ti wet etch 2 ICP metal IBE (Ionfab300+)
Generel description BHF Etch of titanium with or without photoresist mask. Cold RCA1 mix etch of titanium (as stripper or with eagle resist). Dry plasma etch of Ti Sputtering of Ti - pure physical etch
Etch rate range
  • ~?nm/min
  • ~?nm/min
  • ~50-200 nm/min (depending on features size and etch load and recipe settings)
  • ~20nm/min
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • Any size and number that can go inside the beaker in use
  • Any size and number that can go inside the beaker in use
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer)
  • #1 150mm wafers

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Etching_of_Titanium&oldid=49736"