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New page: ==Etching of Aluminium== Etching of aluminium is done wet at Danchip. We have two different solutions: # H<math>_2</math>O:H<math>_3</math>PO<math>_4</math> 1:2 at 50 <sup>o</sup>C # Pre...
 
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==Etching of Aluminium==
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
Etching of aluminium is done wet at Danchip. We have two different solutions:


# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Gold click here]'''


===Comparing the two solutions===
==Etching of Gold==
 
Etching of Gold can be done either by wet etch, or by sputtering with ions.
*[[Specific Process Knowledge/Etch/Wet Gold Etch|Etching of Gold by wet etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Au etch|Sputtering of Au]]
<br clear="all" />
 
==Comparison of Gold Etch Methods==
 
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


{| border="1" cellspacing="0" cellpadding="4" align="left"
!
! Aluminium Etch 1
! Aluminium Etch 2
|-
|General description
|
Etch of pure aluminium
|
Etch of aluminium + 1.5% Si
|-
|-
|Chemical solution
|-style="background:silver; color:black"
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
!
|PES 77-19-04
![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 2]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|Process temperature
|50 <sup>o</sup>C


|20 <sup>o</sup>C
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Wet etch of Au using iodine based chemistry
|Wet etch of Au using Aqua Regina
|Sputtering of Au - pure physical etch
|-


|-
|-
 
|-style="background:LightGrey; color:black"
|Possible masking materials:
!Etch rate range
|
*~100nm/min
|
|
Photoresist (1.5 µm AZ5214E)
*680 nm/min (dilute) or faster (concentrated). Mainly used for complete removal of metals
|
|
Photoresist (1.5 µm AZ5214E)
*~55nm/min (acceptance test)  
|-
|-
|Etch rate
 
|-
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
|
~100 nm/min (Pure Al)
*Isotropic
|
|
~60(??) nm/min
*Isotropic
|
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-
|Batch size
 
|-style="background:LightGrey; color:black"
!Masking material
|
|
1-25 wafers at a time
*Photoresist
|
*None (mainly used for stripping Au)
|
|
1-25 wafer at a time
*Any material that is allowed in the chamber, photoresists included
|-
|-
|Size of substrate
 
 
|-
|-style="background:WhiteSmoke; color:black"
!Substrate size
|
|
4" wafers
*Any size and number that can go inside the beaker in use
|
|
4" wafers
*Any size and number that can go inside the beaker in use
 
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-
|Allowed materials
 
|-
|-style="background:LightGrey; color:black"
!'''Allowed materials'''
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
*Aluminium
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|
|
*Aluminium
*Silicon
*Silicon
*Silicon oxides
*Silicon Oxide
*Silicon nitrides
*Silicon Nitride
*Metals from the +list
*Silicon Oxynitride
*Metals from the -list
*Photoresist
*Alloys from the above list
*E-beam resist
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}
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