Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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Phosphorus Drive-in furnace (A3)

The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Furthermore, the furnace is used for phosphorus drive-in afte pre-deposition/doping or after boron ion implantation.

The furnace is mostly used for wet and dry thermal oxidation of silicon wafers. The oxidation recipes are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.

The purpose of phosphorus doping is to make conductive structures, etch stop layers etc. After a phosphorus pre-deposition/doping or ion implantation process, a drive-in process with or without an oxide growth is done in the furnace. The phosphorus pre-deposition is normally done in the Phosphorus Pre-dep (A4) furnace, and ion implantation have to be done elsewhere.

The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace (except wafers coming form the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench), and please check the cross contamination information in LabManager, before you use the furnace.

The user manual, quality control instruction and results, technical information and contact information can be found in LabManager:

Phosphorus Drive-in furnace (A3)

Process knowledge

Oxidation: look at the Oxidation page
Phosphorus drive-in: look at the Dope with Phosphorus page

Quality Control - Recipe Parameters and Limits

Quality Control (QC) for the processes "Wet1050" and "Dry1050"

QC Recipe:	WET1050	DRY1050
H₂ flow	3 slm	0 slm
O₂ flow	2 slm	5 slm
Temperature	1050 ^oC	1050 ^oC
Oxidation time	30 min	100 min

QC limits	Thickness	Non-uniformity (both over a single wafer and over the boat)
DRY1050	110-116 nm	3 %
WET1050	305-321 nm	5 %

Numbers from March 2020

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose	Thermal oxidation of Si wafers Driving-in pre-deposited or ion-implanted phosphorus	Thermal oxidation: Dry oxidation using O₂ Wet oxidation using H₂O vapour Driving-in pre-deposited or ion-implanted phosphorus Dry or wet oxidation recipes are normally used for this purpose
Performance	Film thickness	Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide) Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 ^oC for Si[100] wafers)
Process parameter range	Process Temperature	800 ^oC - 1150 ^oC
	Process pressure	1 atm (no vacuum)
	Gasses on the system	N₂ O₂ H₂ (in a torch, H₂ and O₂ burns into H₂O for wet oxidation)
Substrates	Batch size	1-30 100 mm wafers (or 50 mm wafers) per run
Substrates	Substrate materials allowed	Silicon wafers (RCA cleaned) Wafers coming from the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench can go directly into the furnace

@@ Line 1: / Line 1: @@
-'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace click here]'''
+'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/A3_Phosphor_Drive-in_furnace click here]'''
+''This page is written by DTU Nanolab  internal''
+[[Category: Equipment |Thermal A3]]
+[[Category: Thermal process|Furnace]]
+[[Category: Furnaces|A3]]
 ==Phosphorus Drive-in furnace (A3)==
-[[Image:A3helstak.jpg|thumb|300x300px|A3 Phosphor Drive-in furnace. Positioned in cleanroom 2]]
+[[Image:A3helstak.jpg|thumb|400x400px|Phosphorus Drive-in furnace (A3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]
+The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for thermal oxidation of silicon wafers. Furthermore, the furnace is used for phosphorus drive-in afte pre-deposition/doping or after boron ion implantation.
-The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus Predep furnace (A4). The Phosphorus Drive-in furnace can also be used for drive-in of phosphorus which has been ion implanted.
+The furnace is mostly used for wet and dry thermal oxidation of silicon wafers. The oxidation recipes are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.
+The purpose of phosphorus doping is to make conductive structures, etch stop layers etc. After a phosphorus pre-deposition/doping or ion implantation process, a drive-in process with or without an oxide growth is done in the furnace. The phosphorus pre-deposition is normally done in the Phosphorus Pre-dep (A4) furnace, and ion implantation have to be done elsewhere.
+The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace (except wafers coming form the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench), and please check the cross contamination information in LabManager, before you use the furnace.
-The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.
 '''The user manual, quality control instruction and results, technical information and contact information can be found in LabManager:'''
@@ Line 13: / Line 24: @@
 ==Process knowledge==
-*Phosphorus drive-in: look at the [[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] page
 *Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
-*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
+*Phosphorus drive-in: look at the [[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] page
 ==Quality Control - Recipe Parameters and Limits==
 {| border="1" cellspacing="2" cellpadding="2" colspan="3"
-|bgcolor="#98FB98" |'''Quality Controle (QC) for the processes "Wet1050" and "Dry1050"'''
+|bgcolor="#98FB98" |'''Quality Control (QC) for the processes "Wet1050" and "Dry1050"'''
 |-
 |
-*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus Furnace A3]<br>
+*[http://labmanager.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus drive-in furnace (A3)]<br>
-*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1988 The newest QC data for wet and dry oxide]<br>
+*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=82 The newest QC data for wet and dry oxide]<br>
 {| {{table}}
@@ Line 30: / Line 41: @@
 ! QC Recipe:
-! Wet1050
+! WET1050
-! Dry1050
+! DRY1050
 |-
 | H<sub>2</sub> flow
-|3 sccm
+|3 slm
-|0 sccm
+|0 slm
 |-
 |O<sub>2</sub> flow
-|2 sccm
+|2 slm
-|5 sccm
+|5 slm
 |-
 |Temperature
-|1050 C
+|1050 <sup>o</sup>C
-|1050 C
+|1050 <sup>o</sup>C
 |-
 |Oxidation time
@@ Line 55: / Line 66: @@
 !QC limits
 |Thickness
-|Non-uniformity (both single wafer and over the boat)
+|Non-uniformity (both over a single wafer
+and over the boat)
 |-
-!Dry1050
+!DRY1050
 |110-116 nm
 |3 %
 |-
-!Wet1050
+!WET1050
 |305-321 nm
 |5 %
@@ Line 68: / Line 80: @@
 |-
 |}
+Numbers from March 2020
 |}
 ==Overview of the performance of the phosphorus drive-in furnace and some process related parameters==
-{| border="2" cellspacing="0" cellpadding="0"
+{| border="2" cellspacing="0" cellpadding="2"
 |-
 !style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation of silicon and annealing of the oxide.
+|style="background:LightGrey; color:black"|
-|style="background:WhiteSmoke; color:black"|Oxidation:
+*Thermal oxidation of Si wafers
-*Dry
+*Driving-in pre-deposited or ion-implanted phosphorus
-*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>)
+|style="background:WhiteSmoke; color:black"|
+Thermal oxidation:
+*Dry oxidation using O<sub>2</sub>
+*Wet oxidation using H<sub>2</sub>O vapour
+Driving-in pre-deposited or ion-implanted phosphorus
+*Dry or wet oxidation recipes are normally used for this purpose
 |-
 !style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (takes too long to make it thicker)
+*Dry oxide: ~ 0 nm - 300 nm (it takes too long to grow a thicker oxide)
-*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker)
+*Wet oxide: ~ 0 nm - 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C for Si[100] wafers)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*800-1150 <sup>o</sup>C
+*800 <sup>o</sup>C - 1150 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*1 atm
+*1 atm (no vacuum)
 |-
 |style="background:LightGrey; color:black"|Gasses on the system
 |style="background:WhiteSmoke; color:black"|
-*O<sub>2</sub>, N<sub>2</sub> and H<sub>2</sub>
+*N<sub>2</sub>
+*O<sub>2</sub>
+*H<sub>2</sub> (in a torch, H<sub>2</sub> and O<sub>2</sub> burns into H<sub>2</sub>O for wet oxidation)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 4" wafer (or 2" wafers) per run
+*1-30 100 mm wafers (or 50 mm wafers) per run
 |-
-| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
 *Silicon wafers (RCA cleaned)
-*From A4 furnace directly (e.g. incl. Predep HF)
+*Wafers coming from the Phosphorus Pre-dep furnace that have been BHF etched in the dedicated bath in the RCA bench can go directly into the furnace
-*In doubt: look at the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination information in LabManager] or please send a mail to [mailto:thinfilm@danchip.dtu.dk thinfilm@danchip.dtu.dk].
 |-
 |}