Specific Process Knowledge/Etch/Etching of Polymer/Polymer Etch by ASE: Difference between revisions
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= Etching of polymers on the ASE = | = Etching of polymers on the ASE = | ||
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! colspan="2" align="center"| Materials | ! colspan="2" align="center"| Materials | ||
! colspan="8" align="center"| Process parameters | ! colspan="8" align="center"| Process parameters | ||
! rowspan="2" align="center" width="300" | Comments by Kevin Riddell SPTS prior to any tests at | ! rowspan="2" align="center" width="300" | Comments by Kevin Riddell SPTS prior to any tests at Nanolab | ||
|- | |- | ||
| Mask | | Mask | ||
| Etched | | Etched | ||
| O<sub>2</sub> | | O<sub>2</sub> | ||
| CO<sub>2</sub> | | CO<sub>2</sub> (no available anymore) | ||
| SF<sub>6</sub> | | SF<sub>6</sub> | ||
| He/Ar | | He/Ar | ||
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==TOPAS== | ==TOPAS== | ||
[[Specific Process Knowledge/Etch/Etching of TOPAS|Etching of Topas]] |
Latest revision as of 10:07, 9 August 2022
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Etching of polymers on the ASE
SPTS has provided some recipes for polymer etching on the ASE. They have NOT been tested yet (As of August 2011) and we are therefore very interested in learning whatever experiences you have. Please contact Jonas. The recipes are located in the root folder. Please copy them to your own folder and modify them there for your own purposes as you would with any other recipe.
Name | Materials | Process parameters | Comments by Kevin Riddell SPTS prior to any tests at Nanolab | ||||||||
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Mask | Etched | O2 | CO2 (no available anymore) | SF6 | He/Ar | Pressure | Temp | Coil | Platen | ||
poly1 | Oxide hard mask | polyimide/PMMA | 0 | 50 | 0 | 0 | 4 | 0 | 600 | 150 | This will etch PMGI, PI, & standard resists. We've never tried it for PMMA, but it should work |
poly2 | standard resists, PI PMMA | 20 | 0 | 0 | 20 | 3 | 10 | 600 | 150 | This will give higher etch rates & better selectivities, but slightly more bowed profiles | |
poly3 | BCB | 43 | 0 | 7 | 0 | 4 | 20 | 800 | 150 | A good start point for PDMS / Ormocer-type Si/ inorganic-containing polymers. The SF6/O2 ratio will depend on the composition of the polymer. |
CYTOP etching: Results by Fei Wang, DTU Nanotech
Folder\name | Materials | Process parameters | Comments | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
Mask | Etched | O2 | CO2 | SF6 | He/Ar | Pressure | Temp | Coil | Platen | ||
set\microrea\feicy3 | 1.5 µm PR | CYTOP | 5 | 0 | 0 | 20 | 3 | 0 | 600 | 150 | Estimated etch rate ~1.3um/min, selectivity around 1:8, etch load app. 10% |
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