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== Choose bonding method ==
{{cc-nanolab}}
 
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Bonding click here]'''
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==Bonding==
For bonding samples to a carrier wafer in order to enable '''dry etching''', please go [[Specific_Process_Knowledge/Etch/DryEtchProcessing/Bonding|here]].
 
For bonding samples to a carrier wafer for '''UV-lithography''' using automatic coater and developer, please see this process flow: [[media:Process_Flow_ChipOnCarrier.docx‎|Process_Flow_ChipOnCarrier.docx‎]], and refer to the [[Specific_Process_Knowledge/Etch/DryEtchProcessing/Bonding#Bonding|bonding procedure]] for dry etching.
 
== Choose equipment ==
*[[/Imprinter 02|Imprinter 02]]
*[[/Wafer Bonder 02|Wafer Bonder 02]]
*[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]]
 
== Choose bonding methods in Wafer Bonder 2 ==


*[[/Eutectic bonding|Eutectic bonding]]
*[[/Eutectic bonding|Eutectic bonding]]
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*[[/Anodic bonding|Anodic bonding]]
*[[/Anodic bonding|Anodic bonding]]


===Comparing the three bonding methods in the EVG NIL===
== Comparing the three bonding methods in the wafer bonder 2 ==
{| border="2" cellspacing="0" cellpadding="4" align="center"
 
!.
{| border="2" cellspacing="0" cellpadding="2"  
 
|-style="background:silver; color:black"
!
![[/Eutectic bonding|Eutectic bonding]]
![[/Eutectic bonding|Eutectic bonding]]
![[/Fusion bonding|Fusion bonding]]
![[/Fusion bonding|Fusion bonding]]
![[/Anodic bonding|Anodic bonding]]
![[/Anodic bonding|Anodic bonding]]
|- valign="top"
|-
|'''General description'''
 
|For bonding two substrates by use of an interphase that makes an eutecticum.
|-style="background:WhiteSmoke; color:black"
|For bonding two identical materials.
!General description
|For bonding Si and Glass.
|For bonding two substrates by use of an interphase that makes an eutecticum.  
|-valign="top"
|For bonding two identical materials.
|'''Bonding temperature'''
|For bonding Si and Glass.  
|Depending on the eutecticum 310°C to 400°C .
|-
|Depending on defects 50°C to 400°C .
 
|Depending on the voltage 300°C to 500°C Standard is 400°C .
|-style="background:silver; color:black"
|-valign="top"
!Bonding temperature
|'''Annnealing temperature'''
|Depending on the eutecticum 310°C to 400°C.  
|Depending on defects 50°C to 400°C.
|Depending on the voltage 300°C to 500°C Standard is 400°C.  
|-
 
|-style="background:WhiteSmoke; color:black"
!Annealing temperature
|No annealing
|1000°C-1100°C in the anneal bond furnace (C3).
|No annealing
|No annealing
|1000°C  in the bond furnace C3
|-
|No annealing
 
|-valign="top"
|-style="background:silver; color:black"
|'''Materials possible to bond'''
!Materials possible to bond
|Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni
|Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni  
|Si/Si, SiO<math>_2</math>/SiO<math>_2</math>
|Si/Si, SiO2/SiO2
|Si/Pyrex (glass)
|Si/Pyrex (glass)  
|-valign="top"
|-
|'''Substrate size'''
 
|Up to 6" (aligning only possible for 4" and 6")
|-style="background:WhiteSmoke; color:black"
|Up to 6" (aligning only possible for 4" and 6")
!Substrate size
|Up to 6" (aligning only possible for 4" and 6")
|Up to 4"
|-valign="top"
|Up to 4"
|'''Cleaning'''
|Up to 4"  
|Cleaning by N2.
|-
 
|-style="background:silver; color:black"
!Cleaning
|Cleaning by N2.  
|Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
|Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
|Cleaning by N2.
|Cleaning by N2.
|-valign="top"
|-
|'''IR alignment'''
 
|-style="background:WhiteSmoke; color:black"
!Backside alignment
|Double side polished wafers.
|Double side polished wafers.
|Double side polished wafers.
|Double side polished wafers.
|Not relevant.
|Not relevant.
 
|-
|-  
|}


== Choose equipment ==
<br clear="all" />
*[[/EVG NIL|EVG NIL]]
* [[Specific Process Knowledge/Thermal Process/C3 Furnace Anneal Bond|C3 furnace anneal bond]].