Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142 click here]''' | ||
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== The nano1.42 recipe == | == The nano1.42 recipe == | ||
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==Etching SRN (Silicon Rich Nitride) with nano1.42== | |||
''This test has been done by Leonid Beliaev'' <br> | |||
*274nm SRN by LPCVD ("6 inch LS" recipe) | |||
*Substrate: Si/SiO2(1100nm) | |||
*DUV-lithography: KRF M230Y resist 360 nm, Barc 65 nm, exposure dose 220J/m2 | |||
*Pattern: Grating with period 400 nm and grating bar width of | |||
*Barc etch in Pegasus 1 at -19 deg, 40s | |||
*Nano 1.42 at -19 deg, 5 min | |||
[[File:Etch_rate.png|400px]] | |||
[[File:Test_007.jpg|400px|left|thumb|Image: Leonid Beliaev]] | |||