Specific Process Knowledge/Etch/DRIE-Pegasus/StandardRecipes: Difference between revisions

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== Overview of the standard processes: Processes  A, B, C, D and SOI ==
== Overview of the standard processes: Processes  A, B, C, D and SOI ==
<!--Page reviewed by jmli 2/2-2023  -->
{{Template:Author-jmli1}}


The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process
The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process
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|  
|-
|-
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! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C]]
 
| Continuous
 
| Very slow etch
 
| 50 nm posts
 
| Aluminum
 
| 99.9 % on 4" wafer
{| border="2" cellspacing="0" cellpadding="2"
|  
 
|  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b>
|-
|-
!style="background:silver; color:black;" align="center"|Purpose
! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processD|Process D]]
|style="background:LightGrey; color:black"|
| Bosch
|style="background:WhiteSmoke; color:black"|
| Smooth sidewall etch
*Purpose 1
| 10 µm trench
*Purpose 2
| Photo resist
|style="background:WhiteSmoke; color:black"|
| 50 % on 6" wafer
*Purpose 1
|  
*Purpose 2
|  
*Purpose 3
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Response 1
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3
|-
|style="background:LightGrey; color:black"|Response 2
|style="background:WhiteSmoke; color:black"|
*Performance range
|style="background:WhiteSmoke; color:black"|
*Performance range
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Parameter 1
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
*Range
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
*Range
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
*Allowed material 3
|-
|}
|}

Latest revision as of 15:39, 2 February 2023

Feedback to this page: click here

Overview of the standard processes: Processes A, B, C, D and SOI

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process

Standard processes on the DRIE-Pegasus
Process name Type Purpose Conditions during original runs Best usage
Feature Mask material Etch load Comments
Process A Bosch Fast etch 80 µm trench Photo resist 12-13 % on 6" wafer
Process B Bosch Fast etch 30 µm diameter via Photo resist 12-13 % on 6" wafer
Process C Continuous Very slow etch 50 nm posts Aluminum 99.9 % on 4" wafer
Process D Bosch Smooth sidewall etch 10 µm trench Photo resist 50 % on 6" wafer
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