Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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<!--Page reviewed by jmli 1/8-2016  -->
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==Etching of Aluminium==
==Etching of Aluminium==
Etching of aluminium is done wet at Danchip. We have two different solutions:


# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium|Etching of Al by dry etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Al]]
<br clear="all" />
 
==Comparison of Aluminium Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


{| border="1" cellspacing="0" cellpadding="4" align="center"
!
! Aluminium Etch 1
! Aluminium Etch 2
|-
|General description
|
Etch of pure aluminium
|
Etch of aluminium + 1.5% Si
|-
|-
|Chemical solution
|-style="background:silver; color:black"
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
!
|PES 77-19-04
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]]
![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|Process temperature
|50 <sup>o</sup>C


|20 <sup>o</sup>C
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Wet etch of Al
|Wet etch/removal: TMAH<br>
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-


|-
|-style="background:LightGrey; color:black"
!Etch rate range
|
*~60-100nm/min
|
*~30nm/min (pure Al)
|
*~350 nm/min (depending on features size and etch load)
|
*~30nm/min (not tested yet)
|-
|-


|Possible masking materials:
|-
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
|
Photoresist (1.5 µm AZ5214E)
*Isotropic
|
|
Photoresist (1.5 µm AZ5214E)
*Isotropic
|-
|Etch rate
|
|
~100 nm/min (Pure Al)
*Anisotropic (vertical sidewalls)
|
|
~60(??) nm/min
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
 
 
|-
|-
|Batch size
|-style="background:LightGrey; color:black"
!Substrate size
|
|
1-25 wafers at a time
*100 mm wafers (in bath)
*150 mm wafers (in bath)
*Any size (in beaker)
|
|
1-25 wafer at a time
*Chips (6-60 mm)
|-
*100 mm wafers
|Size of substrate
*150 mm wafers
|
|
4" wafers
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
|
4" wafers
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
 
|-
|-
|Allowed materials
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|In 'Aluminium Etch' bath:
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
In beaker:
*Any material
|
|
*Every thing that is allowed in the Developer: TMAH Manual
|
*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Aluminium
*Silicon
*Titanium
*Silicon Oxide
*Chromium
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|
|
*Aluminium
*Silicon
*Silicon
*Silicon oxides
*Silicon Oxide
*Silicon nitrides
*Silicon Nitride
*Metals from the +list
*Silicon Oxynitride
*Metals from the -list
*Photoresist
*Alloys from the above list
*E-beam resist
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}

Latest revision as of 09:48, 31 May 2024

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching of Aluminium

Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Aluminium Etch Methods

Aluminium Etch Developer TMAH manual ICP metal IBE (Ionfab300+)
Generel description Wet etch of Al Wet etch/removal: TMAH

Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow here

Dry plasma etch of Al Sputtering of Al - pure physical etch.
Etch rate range
  • ~60-100nm/min
  • ~30nm/min (pure Al)
  • ~350 nm/min (depending on features size and etch load)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • 100 mm wafers (in bath)
  • 150 mm wafers (in bath)
  • Any size (in beaker)
  • Chips (6-60 mm)
  • 100 mm wafers
  • 150 mm wafers
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (when set up to 100mm wafers)
  • #1 150mm wafers (when set up to 150mm wafers)

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials In 'Aluminium Etch' bath:

In beaker:

  • Any material
  • Every thing that is allowed in the Developer: TMAH Manual
  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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