Specific Process Knowledge/Etch/DRIE-Pegasus/SOIetch: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/SOIetch click here]''' | ||
<!--Checked for updates on 14/5-2018 - ok/jmli --> | |||
<!--Checked for updates on 2/10-2020 - ok/jmli --> | |||
== SOI == | |||
{{Template:Author-jmli1}} | |||
<!--Checked for updates on 2/02-2023 - ok/jmli --> | |||
== SOI etch == | |||
{| border="1" cellpadding="1" cellspacing="0" style="text-align:center;" | |||
|- | |||
! rowspan="2" width="100"| Recipe | |||
! rowspan="2" width="20"| Name | |||
! rowspan="2" width="20"| Temp. | |||
! colspan="6" | Deposition step | |||
! colspan="7" | Etch step | |||
! colspan="3" | Comments | |||
|- | |||
! Time | |||
! Pres. | |||
! C<sub>4</sub>F<sub>8</sub> | |||
! SF<sub>6</sub> | |||
! O<sub>2</sub> | |||
! Coil | |||
! Time | |||
! Pres. | |||
! C<sub>4</sub>F<sub>8</sub> | |||
! SF<sub>6</sub> | |||
! O<sub>2</sub> | |||
! Coil | |||
! Platen | |||
! Showerhead | |||
! Runs | |||
! width="100" | Key words | |||
|- | |||
! rowspan="3" | SOI etch <!-- recipe name --> | |||
! SOI <!-- step --> | |||
| 20 <!-- chiller temp --> | |||
! 2 <!-- dep time --> | |||
| 25 <!-- dep pressure --> | |||
| 250 <!-- C4F8 flow --> | |||
| 0 <!-- SF6 flow --> | |||
| 0 <!-- O2 flow --> | |||
| 2000 <!-- coil power --> | |||
| 3 <!-- etch time --> | |||
| 30 <!-- etch pressure --> | |||
| 0 <!-- C4F8 flow --> | |||
| 400 <!-- SF6 flow --> | |||
| 40 <!-- O2 flow --> | |||
| 2800 <!-- coil power --> | |||
| 75 (0.025s, 75%) <!-- platen power --> | |||
! Old <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/SOI/SOI | 1]] <!-- link processes --> | |||
| <!-- keywords --> | |||
|- | |||
! SOI <!-- step --> | |||
| 20 <!-- chiller temp --> | |||
! 2 <!-- dep time --> | |||
| 25 <!-- dep pressure --> | |||
| 250 <!-- C4F8 flow --> | |||
| 0 <!-- SF6 flow --> | |||
| 0 <!-- O2 flow --> | |||
| 2000 <!-- coil power --> | |||
| 3 <!-- etch time --> | |||
| 30 <!-- etch pressure --> | |||
| 0 <!-- C4F8 flow --> | |||
| 400 <!-- SF6 flow --> | |||
| 40 <!-- O2 flow --> | |||
| 2800 <!-- coil power --> | |||
| 75 (0.025s, 75%) <!-- platen power --> | |||
! New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/SOI/SOI | 1]] <!-- link processes --> | |||
| OK <!-- keywords --> | |||
|- | |||
|} | |||
== SOI etch acceptance test == | |||
The SOI etch uses the Low frequency (LF) platen generator to minimize the notching at buried stop layers such as the BOX layer in a SOI wafer. | The SOI etch uses the Low frequency (LF) platen generator to minimize the notching at buried stop layers such as the BOX layer in a SOI wafer. | ||
Latest revision as of 14:44, 2 February 2023
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SOI
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
| Recipe | Name | Temp. | Deposition step | Etch step | Comments | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Time | Pres. | C4F8 | SF6 | O2 | Coil | Time | Pres. | C4F8 | SF6 | O2 | Coil | Platen | Showerhead | Runs | Key words | |||
| SOI etch | SOI | 20 | 2 | 25 | 250 | 0 | 0 | 2000 | 3 | 30 | 0 | 400 | 40 | 2800 | 75 (0.025s, 75%) | Old | 1 | |
| SOI | 20 | 2 | 25 | 250 | 0 | 0 | 2000 | 3 | 30 | 0 | 400 | 40 | 2800 | 75 (0.025s, 75%) | New | 1 | OK | |
SOI etch acceptance test
The SOI etch uses the Low frequency (LF) platen generator to minimize the notching at buried stop layers such as the BOX layer in a SOI wafer.
| Parameter | Specification | Average result |
|---|---|---|
| Etch rate (µm/min) | > 10 | 10.7 |
| Etched depth (µm) | 100 | 107 |
| Scallop size (nm) | < 800 | 685 |
| Profile (degs) | 91 +/- 1 | 90.7 |
| Selectivity to AZ photoresist | > 100 | 183 |
| Undercut (µm) | <1.5 | 0.89 |
| Uniformity (%) | < 3.5 | 2.7 |
| Repeatability (%) | <4 | 0.47 |
| Main etch (D->E) | Etch | Dep |
|---|---|---|
| Gas flow (sccm) | SF6 400 O2 40 | C4F8 250 |
| Cycle time (secs) | 3.0 | 2.0 |
| Pressure (mtorr) | 30 | 25 |
| Coil power (W) | 2800 | 2000 |
| LF Platen power (W) | 75 | 0 |
| LF Platen Pulsing software set-up | 0.025s, 75% | - |
| Cycles | 96 (process time 08:00) | |
| Common | Temperature 20 degs, HBC 10 torr, Long funnel, with baffle & 100 mm spacers | |