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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>




==Platinum deposition ==
==Platinum deposition ==


Platinum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
Platinum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.
 
* [[Specific Process Knowledge/Thin film deposition/Deposition of Platinum/Deposition of Pt in Sputter System (Lesker)|Deposition of Platinum in Sputter System (Lesker)]]




{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
| Batch size
|-style="background:WhiteSmoke; color:black"
! General description
|E-beam deposition of Pt
|Sputter deposition of Pt
|Sputter deposition of Pt
|-
|-style="background:LightGrey; color:black"
! Pre-clean
 
 
|Ar ion etch (only in E-beam evaporator Temescal)
|none
|RF Ar clean
 
|-
|-style="background:WhiteSmoke; color:black"
! Layer thickness
|10Å - 600nm*
|10Å - 600nm*
|10Å - ? ''discuss with staff''
|-
|-style="background:LightGrey; color:black"
! Deposition rate
|0.5Å/s to 10Å/s
|up to 3.74 Å/s
|''not known yet, probably similar to 'old' Lesker system
 
|-
|-style="background:WhiteSmoke; color:black"
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers
*smaller pieces
*Up to 3x8" wafers (ask for holder)
|
*smaller wafers and pieces
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
|
*1x4" wafer or
*1x4" wafer or
*1x6" wafer
*1x6" wafer
*smaller pieces
*smaller pieces
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-
| Pre-clean
 
|RF Ar clean
|RF Ar clean
|RF Ar clean
|-
| Layer thickness
|10Å to 5000Å
|10Å to 5000Å
|10Å to 5000Å
|-
| Deposition rate
|2Å/s to 15Å/s
|10Å/s to 15Å/s
|? Å/s to ? Å/s
|-
|-
|-style="background:LightGrey; color:black"
! Allowed materials
|
Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
|
*Almost any that does not degas.
|
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|-style="background:WhiteSmoke; color:black"
! Comment
| Pt tends to exhibit tensile stress, see section on [[Specific Process Knowledge/Characterization/Stress measurement|stress in thin films]].
|
|
|}
|}
'''*''' ''If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.''