Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Au_etch click here]'''
<br> {{CC-bghe1}}
==Results from the acceptance test in February 2011==
==Results from the acceptance test in February 2011==
'''Acceptance test for Au etch:'''
'''Acceptance test for Au etch:'''
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*50 mm SSP Si wafer
*50 mm SSP Si wafer
*525 µm thick
*525 µm thick
*Supplied by Danchip
*Supplied by Nanolab
|.
|.
|-
|-
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*E-beam resist mask:
*E-beam resist mask:
# 400nm of spin coated ZEP520A e-beam resist
# 400 nm of spin coated ZEP520A e-beam resist
#Patterned by E-beam lithography
#Patterned by E-beam lithography
|.
|.
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!style="background:silver; color:black" align="left" valign="top"|Features to be etched
!style="background:silver; color:black" align="left" valign="top"|Features to be etched
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*300nm - 3µm dots and lines + a square of 200µmx200µm
*300 nm - 3µm dots and lines + a square of 200µmx200µm
|.
|.
|-  
|-  
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!style="background:silver; color:black" align="left" valign="top"|Etch profile
!style="background:silver; color:black" align="left" valign="top"|Etch profile
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*70-90dg.
*70-90 dg.
|
|
*75dg
*75 dg
|}
|}


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!Au etch acceptance
!Au etch acceptance
|-
|-
|Neutalizer current [mA]
|Neutralizer current [mA]
|550
|550
|-
|-
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===Some SEM profile images of the etched Au===
===Some SEM profile images of the etched Au===
{| border="1" cellspacing="1" cellpadding="2"  
{| border="1" cellspacing="1" cellpadding="2"  
!
|
[[image:IBE accpetance S18-AU-ZEP3.jpg|450x450px|thumb|center|s18-Au-ZEP3]]
[[image:IBE accpetance S18-AU-ZEP3.jpg|450x450px|thumb|center|s18-Au-ZEP3]]
!
|
[[image:IBE acceptance S18-AU-ZEP5.jpg|450x450px|thumb|center|s18-Au-ZEP5]]
[[image:IBE acceptance S18-AU-ZEP5.jpg|450x450px|thumb|center|s18-Au-ZEP5]]
|}
|}


==IBE Au etch with Ti mask==
''by bghe@nanolab''


 
Work has been started to find a good process for etching gold with a Titanium mask with high selectivity.
 
 
==IBE Au etch with Ti mask  [[Image:section under construction.jpg|70px]] ==
 
Work has been started to find a good process for etching gold with a Titanium mask with high selektivity.


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|Ti etch test with Zep520A as mask - To etch the Ti mask]]
!Ti etch test with Zep520A as mask - To etch the Ti mask
![[Specific Process Knowledge/Thin film deposition/PECVD|Au etch test with high selectivity to Ti]]
!Au etch test with high selectivity to Ti
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!General description
|Generel description - method 1
|This recipe has a good selectivity between ZEP520A resist and Ti, which makes it good for patterning the Ti that should be used as masking layer for the Au etch. It can also be used to etch Au if the selectivity to the mask is good enough.
|Generel description - method 2
|This recipe has especially good selectivity between Ti and Au which makes it good for gold etching using a thin Ti mask as masking layer. The selectivity to resist is very bad so do not use it with a resist mask.
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Recpe name
!Recipe name
|
|
test Ti acceptance 20111129
Ti acceptance 20111129
|
|
Au_acceptance_with_O2
Au_acceptance_with_O2
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Parameter 2
!IBE parameters
|
|
*A
*Rotation speed = 20 rpm
*B
*Sample angle = 20 degrees
*C
*Ar flow to neutralizer = 6 sccm
*Ar flow to beam = 6 sccm
*Neutralizer current = 300 mA
*Power = 1200 W
*Beam current = 250 mA
*Beam voltage = 800 V
*Beam accelerator voltage = 300 V
|
|
*A
*Rotation speed = 20 rpm
*Sample angle = 30 degrees
*Ar flow to neutralizer = 5 sccm
*Ar flow to beam = 10 sccm
*O2 flow to beam = 4sccm
*Neutralizer current = 550 mA
*Power = 1300 W
*Beam current = 500 mA
*Beam voltage = 600 V
*Beam accelerator voltage = 400 V
|-
 
|-style="background:silver; color:black"
!Results
!
!
|-
|-


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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Substrate size
!Etch rate in resist
|
|
*<nowiki>#</nowiki> small samples
12.8 nm/min (15-12-2011)
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|
|
*<nowiki>#</nowiki> small samples
72 nm/min (13-12-2011)
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!Etch rate in Au
|
|
*Allowed material 1
32.7nm/min (15-12-2011)
*Allowed material 2
|
|
*Allowed material 1
42.6nm/min (13-12-2011)
*Allowed material 2
|-
*Allowed material 3
|-style="background:LightGrey; color:black"
!Etch rate in Ti
|
8.3nm/min (15-12-2011)
|
4.3nm/min (13-12-2011)
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!Selectivity Ti/Zep
|
0.65 (15-12-2011)
|
0.06 (13-12-2011)
|-
|-style="background:LightGrey; color:black"
!Selectivity Au/Ti
|
3.9 (15-12-2011)
|
9.9 (13-12-2011)
|-valign="top"
!SEM images of the etch profile (click to view a larger image)
|
<gallery caption="600nm lines etched for 14 min (15-12-2011)" widths="150px" heights="150px" perrow="2">
image:IBE_Au_Ti_nr13_1.jpg|Several line profiles through Ti and Au.
image:IBE_Au_Ti_nr13_2.jpg|Line profile through Ti and Au.
</gallery>
<gallery widths="150px" height ="150px" perrow="3">
image:IBE_Au_Ti_uden_Ti_nr13_1.jpg|Several line profiles in Au after Ti has been removed.
image:IBE_Au_Ti_uden_Ti_nr13_2.jpg|Line profile in Au after Ti has been removed.
image:IBE_Au_Ti_uden_Ti_nr13_3.jpg|Line in Au after Ti has been removed. Sample is tilted
</gallery>
|
<gallery caption="Ti mask etched for 6min30sec with recipe ''test Ti acceptance 20111129''. The Au was etched for 7min with recipe ''Au_acceptance_with_O2''. The result was less fenching because a thinner mask was used (Ti instead off resist)" widths="150px" height="150px" perrow="3" >
image:IBE_Au_Ti_w14_20130926_500nmT_BHF5min_2.jpg|Tilted line in Au after Ti has been removed.
image:IBE_Au_Ti_W14_20130926_500nm_1.jpg|Profile in Au after Ti has been removed.
image:IBE_Au_Ti_W14_20130926_3000nmT_5.jpg|Tilted line in Au after Ti has been removed.
</gallery>
 
|-
|-
|}
|}


<br clear="all" />
<br clear="all" />
==Al2O3 using Ti mask etching with the "Au acceptance recipe"==
''This work was done by Sezer Köse @fotonik April 2019'' <br>
[[File:Sezer Al2O3 and Ti.JPG|600px]]

Latest revision as of 15:25, 6 February 2023

Feedback to this page: click here
This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated


Results from the acceptance test in February 2011

Acceptance test for Au etch:

. Acceptance Criteria

Acceptance Results

Substrate information
  • 50 mm SSP Si wafer
  • 525 µm thick
  • Supplied by Nanolab
.
Material to be etched
  • E-beam deposited Au
.
Mask information
  • E-beam resist mask:
  1. 400 nm of spin coated ZEP520A e-beam resist
  2. Patterned by E-beam lithography
.
Features to be etched
  • 300 nm - 3µm dots and lines + a square of 200µmx200µm
.
Etch depth
  • 300nm
  • ~272 nm
Etch rate
  • >80nm/min
  • 54.5nm/min +- 0.6nm/min (one standard deviation)
Etch rate uniformity
  • <+-2%
  • +-(0.2% +-0.2%)
Reproducibility
  • <+-2%
  • +-0.9%
Selectivity (Au etch rate/ZEP etch rate)
  • At least 1:1
  • 1.2:1
Etch profile
  • 70-90 dg.
  • 75 dg

Process parameters for the acceptance test

Parameter Au etch acceptance
Neutralizer current [mA] 550
RF Power [W] 1300
Beam current [mA] 500
Beam voltage [V] 600
Beam accelerator voltage 400
Ar flow to neutralizer [sccm] 5.0
Ar flow to beam [sccm] 10.0
Rotation speed [rpm] 20
Stage angle [degrees] 30



Some SEM profile images of the etched Au

s18-Au-ZEP3
s18-Au-ZEP5

IBE Au etch with Ti mask

by bghe@nanolab

Work has been started to find a good process for etching gold with a Titanium mask with high selectivity.

Ti etch test with Zep520A as mask - To etch the Ti mask Au etch test with high selectivity to Ti
General description This recipe has a good selectivity between ZEP520A resist and Ti, which makes it good for patterning the Ti that should be used as masking layer for the Au etch. It can also be used to etch Au if the selectivity to the mask is good enough. This recipe has especially good selectivity between Ti and Au which makes it good for gold etching using a thin Ti mask as masking layer. The selectivity to resist is very bad so do not use it with a resist mask.
Recipe name

Ti acceptance 20111129

Au_acceptance_with_O2

IBE parameters
  • Rotation speed = 20 rpm
  • Sample angle = 20 degrees
  • Ar flow to neutralizer = 6 sccm
  • Ar flow to beam = 6 sccm
  • Neutralizer current = 300 mA
  • Power = 1200 W
  • Beam current = 250 mA
  • Beam voltage = 800 V
  • Beam accelerator voltage = 300 V
  • Rotation speed = 20 rpm
  • Sample angle = 30 degrees
  • Ar flow to neutralizer = 5 sccm
  • Ar flow to beam = 10 sccm
  • O2 flow to beam = 4sccm
  • Neutralizer current = 550 mA
  • Power = 1300 W
  • Beam current = 500 mA
  • Beam voltage = 600 V
  • Beam accelerator voltage = 400 V
Results
Etch rate in resist

12.8 nm/min (15-12-2011)

72 nm/min (13-12-2011)

Etch rate in Au

32.7nm/min (15-12-2011)

42.6nm/min (13-12-2011)

Etch rate in Ti

8.3nm/min (15-12-2011)

4.3nm/min (13-12-2011)

Selectivity Ti/Zep

0.65 (15-12-2011)

0.06 (13-12-2011)

Selectivity Au/Ti

3.9 (15-12-2011)

9.9 (13-12-2011)

SEM images of the etch profile (click to view a larger image)


Al2O3 using Ti mask etching with the "Au acceptance recipe"

This work was done by Sezer Köse @fotonik April 2019