Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions

Latest revision as of 13:07, 20 October 2023

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

IBE/IBSD Ionfab 300: milling and dry etching

IBE/IBSD Ionfab 300 was manufactured by Oxford Instruments Plasma Technology [1]. It was installed at Nanolab in 2011. It was originally installed with the capability of doing both IBE and IBSD. In 2022 we have decommissioned the IBSD part.

IBE: Ion Beam Etch

IBSD: Ion Beam Sputter Deposition (has been decommissioned 2022)

This Ionfab300 from Oxford Instruments is capable of of ion sputter etching/milling. The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees).

The user manual and contact information can be found in LabManager:

IBE/IBSD Ionfab 300+ in LabManager

Process information

Etch

Compare sputter rates in different materials
Some general process trends
SIMS settings
Results from the acceptance test:
- Au etch with zep520A as masking material
- Ti etch with zep 520A as masking material
Magnetic stack containing Ta/MnIr/NiFe
Process develop

Deposition (deposition has been decommissioned on the system)

Crystal Thickness Monitor Settings
Results from the acceptance test:

An overview of the performance of IBE/IBSD Ionfab 300 and some process related parameters

Purpose	Ar sputter etch of various materials. For example many metals and alloys. Reactive Ion beam etch using F	.
Performance	Etch rates	Typical 1-100 nm/min depending om material and process parameters
	Anisotropy	Typical profiles: 70-90 degrees
	Uniformity	Typical within ±2%
Process parameters	Gas flows	Etch source: Ar: 0-40 sccm O₂: 0-100 sccm CHF₃: 0-100 sccm N₂: 0-1000 sccm
	Chamber temperature	0-60 degrees Celcius
	Platen temperature	5-60 degrees Celcius
Substrates	Batch size	One 8" wafer per run One 6" wafer per run (needs carrier) One 4" wafer per run (needs carrier) One 2" wafer per run (needs carrier)
	Materials allowed	Silicon, silicon oxides, silicon nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape Any other material, please ask
	Possible masking material	Photo resist/e-beam resist Ti You are allowed to try with any of the materials on the list above.

@@ Line 1: / Line 1: @@
-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300 click here]'''
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300 click here]'''
+[[Category: Equipment |Etch IBE]]
+[[Category: Etch (Dry) Equipment|IBE]]
+[[Category: Thin Film Deposition|IBE]]
+<br> {{CC-bghe1}}
-==IBE/IBSD Ionfab 300: milling, dry etching and deposition in the same tool==
+==IBE/IBSD Ionfab 300: milling and dry etching ==
-[[Image:IBE_IBSD_udstyret_i_RR1.jpg|500x500px|thumb|IBE IBSD: positioned in cleanroom 1]]
+[[Image:IBE_IBSD_udstyret_i_RR1.jpg|300x300px|thumb|IBE and IBSD: positioned in cleanroom A-1, {{photo1}}]]
+IBE/IBSD Ionfab 300 was manufactured by Oxford Instruments Plasma Technology [https://plasma.oxinst.com/products/ion-beam/ionfab]. It was installed at Nanolab in 2011. It was originally installed with the capability of doing both  IBE and IBSD. In 2022 we have decommissioned the IBSD part.
 IBE: Ion Beam Etch
-IBSD: Ion Beam Sputter Deposition
+IBSD: Ion Beam Sputter Deposition (has been decommissioned 2022)
-This Ionfab300 from Oxford Instruments is capable of of both ion sputter etching/milling and sputter deposition.
+This Ionfab300 from Oxford Instruments is capable of of ion sputter etching/milling.
 The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees).
+'''The user manual and contact information can be found in LabManager:'''
+<!-- remember to remove the type of documents that are not present -->
+<!-- give the link to the equipment info page in LabManager: -->
+[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=267  IBE/IBSD Ionfab 300+ in LabManager]
 ==Process information==
 ===Etch===
+*[http://www.semicore.com/reference/sputtering-yields-reference Compare sputter rates in different materials]
 *[[/IBE process trends|Some general process trends]]
+*[[/SIMS settings|SIMS settings]]
 *Results from the acceptance test:
-**[[/IBE Au etch|Au etch with zep520A as masking material]]
+**[[/IBE Au etch#Results from the acceptance test in February 2011|Au etch with zep520A as masking material]]
 **[[/IBE Ti etch|Ti etch with zep 520A as masking material]]
-**Au etch with Ti as masking material
 *[[/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe]]
-*Etch in Stainless steel with X as masking material
 *Process develop
-**[[/Etch slow|Etch slow: resist can be removed with actone after etch]]
+**[[/Etch slow|Etch slow: resist can be removed with acetone after etch]]
 **[[/IBE Si etch|Si etching using AZ-resist at masking material]]
+**[[/IBE Au etch#IBE Au etch with Ti mask|Au etch with Ti as masking material]]
+**[[/IBE blazed gratings|Etching of blazed gratings]]
+**[[/HfO2 etch|HfO2 etch in deep trenches]]
-===Deposition===
+===Deposition (deposition has been decommissioned on the system)===
+*[[/Crystal Settings|Crystal Thickness Monitor Settings]]
 *Results from the acceptance test:
 **[[/IBSD of TiO2|Deposition of TiO2]]
@@ Line 32: / Line 50: @@
 **[[/IBSD of Si|Deposition of Si]]
-==A rough overview of the performance of IBE/IBSD Ionfab 300 and some process related parameters==
+==An overview of the performance of IBE/IBSD Ionfab 300 and some process related parameters==
 {| border="2" cellspacing="0" cellpadding="10"
@@ Line 39: / Line 57: @@
 |style="background:LightGrey; color:black"|
 *Ar sputter etch of various materials. For example many metals and alloys.
-*Reactive Ion beam etch using F (or Cl)
+*Reactive Ion beam etch using F
-*Sputter deposition of for example high quality optical layers
 |style="background:WhiteSmoke; color:black"|.
 |-
@@ Line 54: / Line 71: @@
 |style="background:LightGrey; color:black"|Uniformity
 |style="background:WhiteSmoke; color:black"|
-*Typical within +-2%
+*Typical within &plusmn;2%
 |-
-!style="background:silver; color:black" align="left" valign="top" rowspan="1"|Process parameters
+!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameters
 |style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
 Etch source:
 *Ar: 0-40 sccm
-*O<math>_2</math>: 0-100 sccm
+*O<sub>2</sub>: 0-100 sccm
-*CHF<math>_3</math>: 0-100 sccm
+*CHF<sub>3</sub>: 0-100 sccm
-*Cl<math>_2</math>: 0-30 sccm
+*N<sub>2</sub>: 0-1000 sccm
-*N<math>_2</math>: 0-1000 sccm
+|-
-Deposition source:
+|style="background:LightGrey; color:black"|Chamber temperature
-*Ar: 0-40 sccm
+|style="background:WhiteSmoke; color:black"|
-*O<math>_2</math>: 0-100 sccm
+*0-60 degrees Celcius
+|-
+|style="background:LightGrey; color:black"|Platen temperature
+|style="background:WhiteSmoke; color:black"|
+*5-60 degrees Celcius
 |-
 !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
 |style="background:LightGrey; color:black"|Batch size
@@ Line 89: / Line 111: @@
 *Polymers
 *Capton tape
+*Any other material, please ask
 |-
 | style="background:LightGrey; color:black"|Possible masking material
 |style="background:WhiteSmoke; color:black"|
-*Photoresist/e-beam resist
+*Photo resist/e-beam resist
 *Ti
 *You are allowed to try with any of the materials on the list above.
 |-
 |}