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= Comparison table =
{{cc-nanolab}}
{| border="2" cellspacing="0" cellpadding="2"


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#EVG Aligner|EVG Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#III-V Aligner|III-V Aligner]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>


|-
[[Category: Equipment|Lithography strip]]
!style="background:silver; width:100px; color:black;" align="center"|Purpose
[[Category: Lithography|Strip]]
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*TS and BS Alignment
*UV exposure
|style="background:WhiteSmoke; color:black"|
*TS and BS Alignment
*UV exposure
|style="background:WhiteSmoke; color:black"|
*TS Alignment
*UV exposure
|


|-
__TOC__
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
*1.25µm down to 1.0µm
|style="background:WhiteSmoke; color:black"|
*1.25µm
|style="background:WhiteSmoke; color:black"|
|


= Strip Comparison Table =
{| class="wikitable"
|-
|-
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
!
|style="background:WhiteSmoke; color:black"|
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher03|Plasma Asher 3: Descum]]
* 350W Hg-lamp, 365nm filter, 303nm filter optional
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher04|Plasma Asher 4 (Clean)]]
* intensity in Constant Intensity(CI) mode 7mJ/cm2
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher05|Plasma Asher 5 (Dirty)]]
|style="background:WhiteSmoke; color:black"|
! [[Specific_Process_Knowledge/Lithography/Strip/resistStrip|Resist strip]]
* 350W Hg-lamp, SU8 filter, 365nm filter optional
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
* intensity in Constant Intensity(CI) mode 7mJ/cm2
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
|-
|style="background:LightGrey; color:black"|Exposure mode
! scope=row style="text-align: left;" | Purpose
|style="background:WhiteSmoke; color:black"|
| Resist descum
*proximity, soft, hard, vacuum contact
|
|style="background:WhiteSmoke; color:black"|
*Resist stripping
*proximity, soft, hard, vacuum contact
*Resist descum
*proximity, soft, hard, vacuum contact
*Surface treatment
|style="background:WhiteSmoke; color:black"|
*Other ashing of organic material
*  
|
|style="background:WhiteSmoke; color:black"|
*Resist stripping
*
*Resist descum
 
*Surface treatment
*Other ashing of organic material
| Resist stripping
| Metal lift-off
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
! scope=row style="text-align: left;" | Method
|style="background:LightGrey; color:black"|Positive Process
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
*
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Solvent & ultrasonication
*
| Solvent & ultrasonication
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
 
|-
|-
|style="background:LightGrey; color:black"|Negative Process
! scope=row style="text-align: left;" | Process gasses
|style="background:WhiteSmoke; color:black"|
| O<sub>2</sub> (50 sccm)
*
|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (0-500 sccm)
*
*N<sub>2</sub> (0-500 sccm)
|style="background:WhiteSmoke; color:black"|
|
*
*O<sub>2</sub> (0-500 sccm)
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub> (0-500 sccm)
*
*CF<sub>4</sub> (0-200 sccm)
 
| NA
| NA
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Process power
|style="background:LightGrey; color:black"|Batch size
| 10-100 W (10-100%)
|style="background:WhiteSmoke; color:black"|
| 150-1000 W
*<nowiki>1</nowiki> small samples
| 150-1000 W
*<nowiki>1</nowiki> 50 mm wafers
| NA
*<nowiki>1</nowiki> 100 mm wafers
| NA
*<nowiki>1</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> 50 mm wafers
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>25</nowiki> 150 mm wafers with automatic handling
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> small samples
*<nowiki>1</nowiki> 50 mm wafers
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>1</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Process pressure
|style="background:WhiteSmoke; color:black"|
| 0.8 mbar
*Si and silicon oxide, silicon nitride
| 0.5-1.5 mbar
*Quartz, pyrex
| 0.5-1.5 mbar
|style="background:WhiteSmoke; color:black"|
| NA
*Si and silicon oxide, silicon nitride
| NA
*Quartz, pyrex
|style="background:WhiteSmoke; color:black"|
*III-V compounds
|style="background:WhiteSmoke; color:black"|
*
|-
|}
 
<br clear="all" />
 
 
 
=Plasma asher 1 =
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3.]]
 
The Plasma Asher1( 300 auto load model) can be used for the following process:
 
*Photoresist stripping
*Surface cleaning after storage
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivating layers and masks
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers
 
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
 
 
==Overview of typical processes==
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Photoresist stripping
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-
|'''Process pressure'''
|0.8- 1.0mbar
|0.5- 1.0mbar
|0.8-1.5mbar
|-
|-
|'''Process gases'''
! scope=row style="text-align: left;" | Process solvent
|O<sub>2</sub>, N<sub>2</sub>
| NA
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures
| NA
|O<sub>2</sub>
| NA
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
|-
|'''Process power'''
! scope=row style="text-align: left;" | Process temperature
|600-1000W
| Up to ~100°C
|150-300W
| Up to ~100°C
|1000W or less for heat- sensitive materials
| Up to ~100°C
| Up to ~65°C
| Up to ~65°C
|-
|-
|'''Process time'''
! scope=row style="text-align: left;" | Process time
|5-60min, depending of photoresist thickness
| 1-10 minutes
|a few seconds to a few minutes
|
|Between 0.5 and 20 hours, depending on the material
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|  
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
|-
|'''Batch size'''
! scope=row style="text-align: left;" | Substrate batch
|1-10 wafers at a time
|
|1 wafer at a time
*Chips: several
|1 wafer at a time, use a container: Petri dish, evaporating dish weighing dish, beaker, etc.
*50 mm wafer: several
|-
*100 mm wafer: 1
|'''Size of substrate'''
|
|2"-6"  
*Chips: several
|2"-6"
*50 mm wafer: several
|2"-6"
*100 mm wafer: 1-25
|-
*150 mm wafer: 1-25
|'''Allowed materials'''
*200 mm wafer: 1-25
|All
|
|All
*Chips: several
|All
*50 mm wafer: several
 
*100 mm wafer: 1-25
|-
*150 mm wafer: 1-25
|}
*200 mm wafer: 1-25
 
<br clear="all" />
 
 
 
 
A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
 
=Plasma asher 2 =
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]
 
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
 
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
 
The typical process parameters when operating the equipment:
*Photeresist stripping
Pressure: 0.8 - 1.0 mbar
 
Gas: O2
 
Power: 600 - 1000 watts
 
Time: 5 -30 min., depending on photoresist type and thickness
 
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.
 
A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
At a load at 2 Fused silicawafers resist removed 0.01-01,5um
 
The other materials have not been tested yet.
 
==Acetone strip with ultrasound==
{| border="1" cellspacing="0" cellpadding="4" align="right"
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
|-
|}
 
This acetone strip is only for wafers without metal and SU-8!
 
There is two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the  resists remains.
 
 
'''Here are the main rules for acetone strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound  and strip them for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping .
 
<br clear="all" />
 
=Lift-off wet bench=
[[Image:Acetone_lift-off.jpg|300x300px|thumb|Acetone lift-off: positioned in cleanroom 3]]
This bench is only for wafers with metal!
 
Here are the main rules for lift-off bench use:
*Place the wafers in a dedicated wafer holder.
*Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
*Rinse your wafers for 4-5 min. in running water after stripping.
 
Find more info about the lift-off process here: [[Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process]]
<br clear="all" />
 
=Overview of acetone benches=
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Acetone strip
! Lift-off
|-
|'''General description'''
|
|
wet stripping of resist
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|
|
lift-off process
*100 mm wafer: 1-25
|-
*150 mm wafer: 1-25
|'''Chemical solution'''
|CH<sub>3</sub>COCH<sub>3</sub>
|CH<sub>3</sub>COCH<sub>3</sub>
|-
|-
|'''Process temperature'''
! scope=row style="text-align: left;" | Substrate materials
|20 <sup>o</sup>C
 
|20 <sup>o</sup>C
 
|-
 
|'''Batch size'''
|
|
1-25 wafers at a time
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
1-25 wafer at a time
*<span style="color:red">'''No metals'''</span><br>
|-
*<span style="color:red">'''No metal oxides'''</span><br>
|'''Size of substrate'''
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
|
4" wafers
*Silicon substrates
*III-V substrates (only on Si carrier)
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
4" wafers
*<span style="color:red">'''No iron (Fe) containing films'''</span>
|-
*Silicon substrates
|'''Allowed materials'''
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*Silicon
*<span style="color:red">'''No iron (Fe) or Copper (Cu) containing films'''</span>
*Silicon Oxide
*Silicon substrates
*Silicon Nitride
*III-V substrates (only if clean)
*Silicon Oxynitride
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
 
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
 


|
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
*All metals


|-
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
|}
<br clear="all" />
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