Specific Process Knowledge/Lithography/UVExposure/aligner MLA2: Difference between revisions
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'''Features''' | '''Features''' | ||
*Optical Autofocus | *Optical Autofocus (enables chips down to 3 x 3 mm) | ||
*Pneumatic Autofocus | *Pneumatic Autofocus | ||
*Top side Alignment | *Top side Alignment | ||
*Back side Alignment | *Back side Alignment | ||
*Gray Scale Exposure | *Gray Scale Exposure (no alignment) | ||
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate | *Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate | ||
*High Aspect Ratio Mode for exposure of thick resists | *<del>High Aspect Ratio Mode for exposure of thick resists</del> (available but not correctly adjusted) | ||
*200 x 200 mm exposure field | *200 x 200 mm exposure field | ||