Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing: Difference between revisions
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==Acceptance test== | ==Acceptance test== | ||
Acceptance criteria on a 100 X 100 mm<sup>2</sup> area: Width of smallest resolved line 1000 ±120 nm (quality), alignment error 500 nm (quality), writing speed 1100 mm<sup>2</sup>/min (fast). | Acceptance criteria on a 100 X 100 mm<sup>2</sup> area: Width of smallest resolved line 1000 ±120 nm (quality) in 0.5µm resist, alignment error 500 nm (quality), writing speed 1100 mm<sup>2</sup>/min (fast). | ||
The acceptance test also included a verification of back side alignment (better than 1 µm), as well as a test of the conversion speed (less than 15 minutes for a dense design of circles). | The acceptance test also included a verification of back side alignment (better than 1 µm), as well as a test of the conversion speed (less than 15 minutes for a dense design of circles). | ||
'''Exposed on mask blank, transferred via wet chrome etch, and measured at Heidelberg (FAT), or exposed and inspected at DTU (SAT)''' | '''Exposed on mask blank, transferred via wet chrome etch, and measured at Heidelberg (FAT), or exposed and inspected at DTU (SAT) (both 0.5µm resist)''' | ||
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