Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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<gallery caption="Different places to do anisotropic wet silicon etch" widths="350px" heights="250px" perrow="3"> | <gallery caption="Different places to do anisotropic wet silicon etch" widths="350px" heights="250px" perrow="3"> | ||
image:KOH_BHF.JPG|Wetbench 01: Si etch, for Si etch of 4" and 6" wafers using KOH. Positioned in cleanroom D-3. | image:KOH_BHF.JPG|Wetbench 01: Si etch, for Si etch of 4" and 6" wafers using KOH. Positioned in cleanroom D-3. | ||
image:KOH_fumehood.JPG|Fume hood 06: Si etch, for Si etch of 4" and 6" wafers using KOH. Positioned in cleanroom D-3. This is used for wafers that are considered dirty.</gallery> | image:KOH_fumehood.JPG|Fume hood 06: Si etch, for Si etch of 4" and 6" wafers using KOH. Positioned in cleanroom D-3. This is used for wafers that are considered dirty. The workspace in the fume hood can also be booked and used for beaker etch of Si and in some cases Chromium etch.</gallery> | ||
'''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:''' | '''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:''' | ||
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*TEOS oxide from furnace: 300nm etched in 11 min | *TEOS oxide from furnace: 300nm etched in 11 min | ||
jemafh@nilt 2019-Marts: | jemafh@nilt 2019-Marts: | ||
*Standard from PECVD3: selectivity 1:100 to Si | *Standard from PECVD3: selectivity 1:100 to Si(100) | ||
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|style="background:WhiteSmoke; color:black"|See etchrates for PECVD SiN [https://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_PECVD/PECVD3:_Low_stress_nitride_testing#DOE_made_to_find_a_good_QC_nitride_recipe_with_low_stress_and_low_KOH_etch_rate_(by_Berit_Herstrøm_@_DTU_Nanolab_2016_Marts) here] | |style="background:WhiteSmoke; color:black"|See etchrates for PECVD SiN [https://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_PECVD/PECVD3:_Low_stress_nitride_testing#DOE_made_to_find_a_good_QC_nitride_recipe_with_low_stress_and_low_KOH_etch_rate_(by_Berit_Herstrøm_@_DTU_Nanolab_2016_Marts) here] | ||
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|style="background:LightGrey; color:black"|Etch rates in LPCVD Si3N4 and SiN | |||
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*Etch rates in LPCVD nitrides is very low. Etch selectivities to Si(100) is higher than 1:10.000 | |||
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*Etch rates in LPCVD nitrides is very low. Etch selectivities to Si(100) is higher than 1:10.000 | |||
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*Etch rates in LPCVD nitrides is very low. Etch selectivities to Si(100) is higher than 1:10.000 | |||
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|style="background:LightGrey; color:black"|Roughness | |style="background:LightGrey; color:black"|Roughness | ||