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Specific Process Knowledge/Lithography/Strip: Difference between revisions

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*NMP (Remover 1165)
*NMP (Remover 1165)
*IPA (rinsing agent)
*IPA (rinsing agent)
|-
! scope=row style="text-align: left;" | Process temperature
| Up to ~100°C
| Up to ~100°C
| Up to ~100°C
| Up to ~65°C
| Up to ~65°C
|-
|-
! scope=row style="text-align: left;" | Process time
! scope=row style="text-align: left;" | Process time
Line 137: Line 144:
|
|
*Silicon substrates
*Silicon substrates
*III-V substrates
*III-V substrates (only on Si carrier)
*Glass substrates
*Glass substrates
*Polymer substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No iron (Fe) containing films'''</span>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*Silicon substrates
*III-V substrates
*III-V substrates
*Glass substrates
*Glass substrates
*Polymer substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*<span style="color:red">'''No iron (Fe) or Copper (Cu) containing films'''</span>
*Silicon substrates
*Silicon substrates
*III-V substrates (only if clean)
*III-V substrates (only if clean)
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*Films, or patterned films, of any material except type IV (Pb, Te)
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<!--
= Plasma Ashing process parameters=
{| class="wikitable"
|-
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum]] !! Surface treatment !! Other ashing of organic material
|-
! scope=row style="text-align: left;" | Tool
| Plasma asher 4 & 5 || Plasma asher 3: Descum || Plasma asher 4 & 5 || Plasma asher 4 & 5 || Plasma asher 4 & 5
|-
! scope=row style="text-align: left;" | Process pressure
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|-
! scope=row style="text-align: left;" | Process gasses
|
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub>
*N<sub>2</sub>
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
! scope=row style="text-align: left;" | Process power
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
|-
! scope=row style="text-align: left;" | Process time
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1-25 || 1-25
|}
<br clear="all" />
-->
<!--
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
-->
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}


=Decommisioned tools=
=Decommisioned tools=
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