Specific Process Knowledge/Lithography/Strip/plasmaAsher04: Difference between revisions
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The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login''' | The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login''' | ||
==Process information== | |||
'''Typical stripping parameters'''<br> | '''Typical stripping parameters'''<br> | ||
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate. | Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate. | ||
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[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment| | ==Process development sections== | ||
*[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment|Stripping with plasma asher 4 and plasma asher 5]] | |||
*[[Specific Process Knowledge/Lithography/Descum/plasmaAsher04|Descumming with plasma asher 4 and plasma asher 5]] | |||
Latest revision as of 09:55, 25 June 2026
Plasma Asher 4
Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024
The Plasma Asher 4 can be used for the following processes:
- Photoresist stripping
- Descumming
- Surface cleaning
- Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
- No metals allowed
- No metal oxides allowed
- No III-V materials allowed
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Process information
Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
- O2: 100 sccm
- N2: 100 sccm
- Pressure (DSC): 1.3 mbar
- Power: 1000 W
- Time (single wafer): 20-30 minutes
- Time (full boat): 90 minutes