Jump to content

Specific Process Knowledge/Lithography/Aligners/MAvsMLA: Difference between revisions

Taran (talk | contribs)
Taran (talk | contribs)
(One intermediate revision by the same user not shown)
Line 186: Line 186:
<br clear="all" />
<br clear="all" />


===Resist profile (linewidth and sidewall angle)===
===Resist profile===
====Linewidth and sidewall angle vs exposure dose====
====Linewidth and sidewall angle vs exposure dose====
'''SEM images of 2µm triplets as a function of exposure dose:'''
'''SEM images of 2µm triplets as a function of exposure dose:'''
Line 256: Line 256:


====Linewidth and sidewall angle vs defocus parameter====
====Linewidth and sidewall angle vs defocus parameter====
'''SEM images as a function of defocus parameter for Aligner: Maskless 02 (MLA2):'''
'''SEM images as a function of defocus parameter for Aligner: Maskless 02 (MLA2) using dose 95mJ/cm<sup>2</sup>:'''
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
|-
|-