Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing: Difference between revisions
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'''The user manual, technical information and contact information can be found in LabManager:''' | '''The user manual, technical information and contact information can be found in LabManager:''' | ||
'''[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=340 | '''[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=340 Resist Pyrolysis furnace]''' | ||
==Process information== | ==Process information== | ||
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*Pyrolysis of different resists | *Pyrolysis of different resists | ||
*Annealing in N<sub>2</sub> | |||
*Annealing in forming gas (up to 5% H<sub>2</sub> mixed with N<sub>2</sub>) - Not tested | |||
*Dry oxidation of silicon | *Dry oxidation of silicon | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Dry oxidation: 50 Å to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker oxide layer) | *Dry oxidation of silicon: 50 Å to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker oxide layer) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process | |style="background:LightGrey; color:black"|Process temperature | ||
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*No vacuum: Room temperature - 1100 <sup>o</sup>C - Normally maximum 1050 <sup>o</sup>C allowed | *No vacuum: Room temperature - 1100 <sup>o</sup>C - Normally maximum 1050 <sup>o</sup>C allowed | ||
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*Atmospheric pressure | *Atmospheric pressure | ||
*Vacuum down to ~0.1 mbar (gas flow dependent) | *Vacuum: Pressure down to ~0.1 mbar (gas flow dependent) | ||
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|style="background:LightGrey; color:black"|Gases on the system | |style="background:LightGrey; color:black"|Gases on the system | ||
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Atmospheric pressure: | Atmospheric pressure: | ||
*N<sub>2</sub>: 20 | *N<sub>2</sub>: 20 SLM - Maximum 10 SLM recommended (to protect the heaters) | ||
*O<sub>2</sub>: 10 | *O<sub>2</sub>: 10 SLM | ||
*H<sub>2</sub>: 5 | *H<sub>2</sub>: 5 SLM - Not allowed | ||
*N<sub>2</sub> mix : 10 | *N<sub>2</sub> mix: 10 SLM (for forming gas, i.e. up to 5% H<sub>2</sub> mixed with N<sub>2</sub>) - Not tested | ||
Vacuum: | Vacuum: | ||
*N<sub>2</sub>: 2 | *N<sub>2</sub>: 2 SLM | ||
*O<sub>2</sub>: 2 | *O<sub>2</sub>: 2 SLM | ||
*H<sub>2</sub>: Not allowed | *H<sub>2</sub>: Not allowed | ||
*N<sub>2</sub> mix : Not allowed | *N<sub>2</sub> mix : Not allowed | ||
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|style="background:LightGrey; color:black"|Substrate materials allowed | |style="background:LightGrey; color:black"|Substrate materials allowed | ||
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* | *Normally only samples for resist pyrolysis approved by Nanolab | ||
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