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| ![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] | | ![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] |
| ![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | | ![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] |
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| | ![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|DRIE-Pegasus 2]] |
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| |-style="background:WhiteSmoke; color:black"
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| !Generel description
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| |Wet etch of Cr premixed (Chrome etch 18)
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| |Dry plasma etch of Cr
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| |Sputtering of Cr - pure physical etch
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| |-style="background:LightGrey; color:black"
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| !Etch rate range
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| *~150nm/min at room temperature
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| *~14 nm/min (depending on features size and etch load)
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| *~30nm/min (not tested yet)
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| |-style="background:WhiteSmoke; color:black"
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| !Etch profile
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| *Isotropic
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| *Anisotropic (vertical sidewalls)
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| *Anisotropic (angles sidewalls, typical around 70 dg)
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| |-
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| |-style="background:LightGrey; color:black"
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| !Substrate size
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| *Any size and number that can go inside the beaker in use
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| *smaller pieces on a carrier wafer
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| *<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
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| *<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
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| Smaller pieces glued to carrier wafer
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| *<nowiki>#</nowiki>1 50mm wafer
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| *<nowiki>#</nowiki>1 100mm wafer
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| *<nowiki>#</nowiki>1 150mm wafer
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| *<nowiki>#</nowiki>1 200mm wafer
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| |-
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| |-
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| |-style="background:WhiteSmoke; color:black"
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| !Allowed materials
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| No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
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| *Silicon
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| *Quartz/fused silica
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| *Photoresist/e-beam resist
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| *PolySilicon,
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| *Silicon oxide
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| *Silicon (oxy)nitride
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| *Aluminium
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| *Titanium
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| *Chromium
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| *Silicon
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| *Silicon oxides
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| *Silicon nitrides
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| *Metals from the +list
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| *Metals from the -list
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| *Alloys from the above list
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| *Stainless steel
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| *Glass
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| *III-V materials
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| *Resists
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| *Polymers
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| *Capton tape
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| |-
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| |}
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| ===Comparison of Chromium Etch Methods===
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| {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
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| |-style="background:silver; color:black"
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| !
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| ![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]]
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| ![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
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| ![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]]
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| ![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|Pegasus 2]] | |
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| |Dry plasma etch of Cr | | |Dry plasma etch of Cr |
| |Sputtering of Cr - pure physical etch | | |Sputtering of Cr - pure physical etch |
| |Primarily shallow etching of silicon but also thin layers of SiO2, TaO2 and Cr | | |Primarily shallow dry etching of silicon but also thin layers of SiO2, TaO2 and Cr |
| |- | | |- |
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| *Any size and number that can go inside the beaker in use | | *Any size and number that can go inside the beaker in use |
| | | | | |
| *smaller pieces on a carrier wafer | | * 150 mm wafers |
| *<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
| | * Smaller wafers or pieces on a 150 mm carrier wafer |
| *<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
| |
| | | | | |
| Smaller pieces glued to carrier wafer | | Smaller pieces glued to carrier wafer |
| *<nowiki>#</nowiki>1 50mm wafer | | * 50mm wafer |
| *<nowiki>#</nowiki>1 100mm wafer | | * 100mm wafer |
| *<nowiki>#</nowiki>1 150mm wafer | | * 150mm wafer |
| *<nowiki>#</nowiki>1 200mm wafer | | * 200mm wafer |
| | | | | |
| | | * 150mm wafer |
| | | * Smaller wafers or pieces on 150mm carrier |
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| |- | | |- |
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| *Polymers | | *Polymers |
| *Capton tape | | *Capton tape |
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| | * Silicon |
| | * Silicon oxides |
| | * Silicon nitrides |
| | * Thin layers of Cr, TaO2 |
| |- | | |- |
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| |} | | |} |
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Etching of Chromium
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Chromium Etch Methods
|
|
Cr wet etch
|
ICP metal
|
IBE (Ionfab300+)
|
DRIE-Pegasus 2
|
| General description
|
Wet etch of Cr premixed (Chrome etch 18)
|
Dry plasma etch of Cr
|
Sputtering of Cr - pure physical etch
|
Primarily shallow dry etching of silicon but also thin layers of SiO2, TaO2 and Cr
|
| Etch rate range
|
- ~150nm/min at room temperature
|
- ~14 nm/min (depending on features size and etch load)
|
- ~30nm/min (not tested yet)
|
|
| Etch profile
|
|
- Anisotropic (vertical sidewalls)
|
- Anisotropic (angles sidewalls, typical around 70 dg)
|
- Anisotropic (vertical sidewalls)
|
| Substrate size
|
- Any size and number that can go inside the beaker in use
|
- 150 mm wafers
- Smaller wafers or pieces on a 150 mm carrier wafer
|
Smaller pieces glued to carrier wafer
- 50mm wafer
- 100mm wafer
- 150mm wafer
- 200mm wafer
|
- 150mm wafer
- Smaller wafers or pieces on 150mm carrier
|
| Allowed materials
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
- Silicon
- Quartz/fused silica
- Photoresist/e-beam resist
- PolySilicon,
- Silicon oxide
- Silicon (oxy)nitride
- Aluminium
- Titanium
- Chromium
|
- Silicon
- Silicon oxides
- Silicon nitrides
- Metals from the +list
- Metals from the -list
- Alloys from the above list
- Stainless steel
- Glass
- III-V materials
- Resists
- Polymers
- Capton tape
|
- Silicon
- Silicon oxides
- Silicon nitrides
- Thin layers of Cr, TaO2
|
