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==Etching of Chromium==
==Etching of Chromium==
Etching of chromium is done wet at Danchip. We have two solution for this:


# HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
# Commercial chromium etch
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by ICP metal]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Cr]]
<br clear="all" />


Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)
==Comparison of Chromium Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


{| border="1" cellspacing="0" cellpadding="4" align="left"
!
! Chromium etch 1
! Chromium etch 2
|-
|General description
|
Etch of chromium
|
Etch of chronium
|-
|-
|Chemical solution
|-style="background:silver; color:black"
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g
!
|Commercial chromium etch
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]]
CE 8002-A
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|DRIE-Pegasus 2]]
|-
|-
|Process temperature
|Room temperature


|Room temperature
|-
|-style="background:WhiteSmoke; color:black"
!General description
|Wet etch of Cr premixed (Chrome etch 18)
|Dry plasma etch of Cr
|Sputtering of Cr - pure physical etch
|Primarily shallow dry etching of silicon but also thin layers of SiO2, TaO2 and Cr
|-


|-
|-
 
|-style="background:LightGrey; color:black"
|Possible masking materials:
!Etch rate range
|
|
Photoresist (1.5 µm AZ5214E)
*~150nm/min at room temperature
|
|
Photoresist (1.5 µm AZ5214E)
*~14 nm/min (depending on features size and etch load)  
|
*~30nm/min (not tested yet)
|
* very slow
|-
 
|-
|-
|Etch rate
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
*Isotropic
|
|
~40-100 nm/min
*Anisotropic (vertical sidewalls)
|
|
~10-20 nm/min
*Anisotropic (angles sidewalls, typical around 70 dg)
|
*Anisotropic (vertical sidewalls)
|-
 
|-
|-
|Batch size
|-style="background:LightGrey; color:black"
!Substrate size
|
*Any size and number that can go inside the beaker in use
|
|
1-25 wafers at a time
* 150 mm wafers
* Smaller wafers or pieces on a 150 mm carrier wafer
|
|
1-25 wafer at a time
Smaller pieces glued to carrier wafer
* 50mm wafer
* 100mm wafer
* 150mm wafer
* 200mm wafer
|
* 150mm wafer
* Smaller wafers or pieces on 150mm carrier
|-
|-
|Size of substrate
 
|-
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
|
4" wafers
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
4" wafers
*Silicon
|-
*Quartz/fused silica
|Allowed materials
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
|
*Aluminium
*Silicon
*Silicon
*Silicon oxides
*Silicon Oxide
*Silicon nitrides
*Silicon Nitride
*Metals from the +list
*Silicon Oxynitride
*Metals from the -list
*Photoresist
*Alloys from the above list
*E-beam resist
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|
|
*Aluminium
* Silicon  
*Silicon
* Silicon oxides
*Silicon Oxide
* Silicon nitrides
*Silicon Nitride
* Thin layers of Cr, TaO2
*Silicon Oxynitride
*Photoresist
*E-beam resist
|-
|-
|}
|}
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