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New page: ==Etching of Aluminium== Etching of aluminium is done wet at Danchip. We have two different solutions: # H<math>_2</math>O:H<math>_3</math>PO<math>_4</math> 1:2 at 50 <sup>o</sup>C # Pre...
 
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==Etching of Aluminium==
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
Etching of aluminium is done wet at Danchip. We have two different solutions:


# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
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# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Chromium click here]'''
<!--Page reviewed by jmli 1/8-2016  -->
<!--Page reviewed by jmli 9/8-2022  -->


===Comparing the two solutions===


{| border="1" cellspacing="0" cellpadding="4" align="left"
==Etching of Chromium==
!
 
! Aluminium Etch 1
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
! Aluminium Etch 2
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]]
|-  
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by ICP metal]]
|General description
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Cr]]
|
<br clear="all" />
Etch of pure aluminium
 
|
==Comparison of Chromium Etch Methods==
Etch of aluminium + 1.5% Si
 
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
|-
 
|-
|-
|Chemical solution
|-style="background:silver; color:black"
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
!
|PES 77-19-04
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|DRIE-Pegasus 2]]
|-
|-
|Process temperature
|50 <sup>o</sup>C


|20 <sup>o</sup>C
|-
|-style="background:WhiteSmoke; color:black"
!General description
|Wet etch of Cr premixed (Chrome etch 18)
|Dry plasma etch of Cr
|Sputtering of Cr - pure physical etch
|Primarily shallow dry etching of silicon but also thin layers of SiO2, TaO2 and Cr
|-


|-
|-
 
|-style="background:LightGrey; color:black"
|Possible masking materials:
!Etch rate range
|
|
Photoresist (1.5 µm AZ5214E)
*~150nm/min at room temperature
|
|
Photoresist (1.5 µm AZ5214E)
*~14 nm/min (depending on features size and etch load)  
|
*~30nm/min (not tested yet)
|
* very slow
|-
 
|-
|-
|Etch rate
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
*Isotropic
|
|
~100 nm/min (Pure Al)
*Anisotropic (vertical sidewalls)
|
|
~60(??) nm/min
*Anisotropic (angles sidewalls, typical around 70 dg)
|
*Anisotropic (vertical sidewalls)
|-
 
|-
|-
|Batch size
|-style="background:LightGrey; color:black"
!Substrate size
|
*Any size and number that can go inside the beaker in use
|
|
1-25 wafers at a time
* 150 mm wafers
* Smaller wafers or pieces on a 150 mm carrier wafer
|
|
1-25 wafer at a time
Smaller pieces glued to carrier wafer
* 50mm wafer
* 100mm wafer
* 150mm wafer
* 200mm wafer
|
* 150mm wafer
* Smaller wafers or pieces on 150mm carrier
|-
|-
|Size of substrate
 
|-
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
|
4" wafers
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
4" wafers
*Silicon
|-
*Quartz/fused silica
|Allowed materials
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
|
*Aluminium
*Silicon
*Silicon
*Silicon oxides
*Silicon Oxide
*Silicon nitrides
*Silicon Nitride
*Metals from the +list
*Silicon Oxynitride
*Metals from the -list
*Photoresist
*Alloys from the above list
*E-beam resist
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|
|
*Aluminium
* Silicon  
*Silicon
* Silicon oxides
*Silicon Oxide
* Silicon nitrides
*Silicon Nitride
* Thin layers of Cr, TaO2
*Silicon Oxynitride
*Photoresist
*E-beam resist
|-
|-
|}
|}
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