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===Results with SiO2_res_10 and with with the electro magnets on===
===Results with SiO2_res_10 and with with the electro magnets on===
[[File:Contour Plot Y31 EM_02_30 white to blue.jpg|400px|thumb|left|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]]
The SiO2:res_10 recipe was tested with the electromagnets on but it seems to no no good for the results.[[File:Contour Plot Y31 EM_02_30 white to blue.jpg|400px|thumb|left|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]]
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Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip, which is positioned in the center of a 6" wafer. The Etch profile is more angled.  
Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip, which is positioned in the center of a 6" wafer. The Etch profile is more angled.  


*Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A
*Removing the H2 from the recipe to get less redeposition at lower platen power (200W), EM:02/30A. Se result below. This gave significantly lower etch rate and no etching in the smallest openings.


<gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5">
<gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5">
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==SiO2 Etch using aSi as masking material==
{{CC-bghe2}} <br>
I was starting up development of SiO2 etch using aSi as masking material. This is on pause because the results did not look promishing on high aspect ratio structures wit DUV pattern due to large faceting on the aSi mask. I turned to Cr mask instead  <br>
The samples I use are:
*6" Si afters with oxide (2µm),
*aSi (~300nm),
*Neg. DUV reist (~60nm barc, ~350 nm resist)
*Reticle: Danchip/Triple-D
*Dose 230 J/m2
First I need to make sure that the resist work for pattering the aSi layer is good. If the resist is not good the final etch will also not be good.


===DUV optimization===
Dose test with the doses (J/m2): 200, 210, 220, 230, 240, 250, 270, 280
The aim was to get good line for 400nm pitch/200nm lines
<gallery caption="400nm pitch 200 nm lines" perrow="5" widths="200px" heights="150px">
Image:dose200_no2_22.jpg |200 J/m2 400nm/268nm
Image:dose210_no2_15.jpg |210 J/m2 400nm/239nm
Image:dose220_no2_13.jpg |220 J/m2 400nm/208nm
Image:dose230_no2_11.jpg |230 J/m2 400nm/209nm
Image:dose240_no2_05.jpg |240 J/m2 400nm/215nm
Image:dose250_no2_11.jpg |250 J/m2 400nm/207nm
Image:dose260_no2_18.jpg |260 J/m2 400nm/188nm
Image:dose270_no2_24.jpg |270 J/m2 400nm/155nm
Image:dose280_no1_15.jpg |280 J/m2 400nm/0nm
</gallery>
<gallery caption="1000nm pitch 500 nm lines" perrow="3" widths="200px" heights="150px">
Image:dose210_no2_17.jpg |210 J/m2 1000nm/581nm
Image:dose230_no2_12.jpg |230 J/m2 1000nm/517nm
Image:dose240_no2_03.jpg |240 J/m2 1000nm/518nm
Image:dose250_no2_09.jpg |250 J/m2 1000nm/510nm
Image:dose260_no2_15.jpg |260 J/m2 1000nm/493nm
Image:dose270_no2_22.jpg |270 J/m2 1000nm/494nm
</gallery>


==SiO2 etch with Cr mask==
==SiO2 etch with Cr mask==
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File:C09721_center_21.jpg
File:C09721_center_21.jpg
File:C09721_center_22.jpg
File:C09721_center_22.jpg
</gallery>
==SiO2 Etch using aSi as masking material==
{{CC-bghe2}} <br>
I was starting up development of SiO2 etch using aSi as masking material. This is on pause because the results did not look promishing on high aspect ratio structures wit DUV pattern due to large faceting on the aSi mask. I turned to Cr mask instead  <br>
The samples I use are:
*6" Si afters with oxide (2µm),
*aSi (~300nm),
*Neg. DUV reist (~60nm barc, ~350 nm resist)
*Reticle: Danchip/Triple-D
*Dose 230 J/m2
First I need to make sure that the resist work for pattering the aSi layer is good. If the resist is not good the final etch will also not be good.
===DUV optimization===
Dose test with the doses (J/m2): 200, 210, 220, 230, 240, 250, 270, 280
The aim was to get good line for 400nm pitch/200nm lines
<gallery caption="400nm pitch 200 nm lines" perrow="5" widths="200px" heights="150px">
Image:dose200_no2_22.jpg |200 J/m2 400nm/268nm
Image:dose210_no2_15.jpg |210 J/m2 400nm/239nm
Image:dose220_no2_13.jpg |220 J/m2 400nm/208nm
Image:dose230_no2_11.jpg |230 J/m2 400nm/209nm
Image:dose240_no2_05.jpg |240 J/m2 400nm/215nm
Image:dose250_no2_11.jpg |250 J/m2 400nm/207nm
Image:dose260_no2_18.jpg |260 J/m2 400nm/188nm
Image:dose270_no2_24.jpg |270 J/m2 400nm/155nm
Image:dose280_no1_15.jpg |280 J/m2 400nm/0nm
</gallery>
<gallery caption="1000nm pitch 500 nm lines" perrow="3" widths="200px" heights="150px">
Image:dose210_no2_17.jpg |210 J/m2 1000nm/581nm
Image:dose230_no2_12.jpg |230 J/m2 1000nm/517nm
Image:dose240_no2_03.jpg |240 J/m2 1000nm/518nm
Image:dose250_no2_09.jpg |250 J/m2 1000nm/510nm
Image:dose260_no2_15.jpg |260 J/m2 1000nm/493nm
Image:dose270_no2_22.jpg |270 J/m2 1000nm/494nm
</gallery>
</gallery>
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