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{{:Specific Process Knowledge/Lithography/authors_generic}}
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/MiR click here]'''
[[Category: Lithography|Resist]]
[[Category: Resist|AZ MiR 701]]
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*PEB time: 60 s
*PEB time: 60 s


During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be removed by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into unactivated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1-2µm film). Thicker coatings may require longer bake, and substrate thickness and material, e.g glass, may also affect the required baking time.


Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5µm thick MiR resist film will be approximately 1.4µm after PEB.
During exposure, interaction between the incoming light and the light reflected by the substrate can cause a standing wave to form in the resist (especially true for single line/wavelength exposure). This leads to a wavy sidewall after development. The standing wave pattern can be reduced by introducing a post-exposure bake before development, which allows the activated PAC to diffuse into un-activated regions, thus smoothing the sidewall. The recommended PEB for MiR is 60 s at 110°C (for a 1 - 2 µm film). Thicker coatings may require longer bake, and substrate thickness and material may also affect the required baking time.
 
Since the post-exposure bake is at an elevated temperature compared to the soft bake, it will cause the resist film to become 5-10% thinner (probably due to continued evaporation of solvent). A 1.5 µm thick MiR resist film will be approximately 1.4 µm after PEB.
 
<gallery style="text-align: center;" widths=450 heights=350>
MIR_noPEB.jpg|1.5 µm AZ MIR 701 without PEB
MIR_withPEB.jpg|1.5 µm AZ MIR 701 with PEB
</gallery>


==Development==
==Development==
'''Development speed:'''
'''Development speed:'''
*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min
*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min
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