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= Strip Comparison Table =
= Strip Comparison Table =
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
{| class="wikitable"
 
|-
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
!
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4 (Clean)]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</b>
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
 
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
! scope=row style="text-align: left;" | Purpose  
|style="background:LightGrey; color:black"|
| Resist descum
|style="background:WhiteSmoke; color:black"|
|
Resist descum
*Resist stripping
|style="background:WhiteSmoke; color:black"|
*Resist descum
'''Clean wafers only:'''<br>
|
No metal<br>
*Resist stripping
No metal oxides<br>
*Resist descum
No III-V materials
| Resist stripping
|style="background:WhiteSmoke; color:black"|
| Metal lift-off
All purposes
|style="background:WhiteSmoke; color:black"|
Resist strip - no metal lift off!
|style="background:WhiteSmoke; color:black"|
Lift-off
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Method
! scope=row style="text-align: left;" | Method
|style="background:LightGrey; color:black"|
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
Plasma ashing
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Solvent & ultrasonication
Plasma ashing
| Solvent & ultrasonication
|style="background:WhiteSmoke; color:black"|
Plasma ashing
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
! scope=row style="text-align: left;" | Process gasses
|style="background:LightGrey; color:black"|Process gasses
| O<sub>2</sub> (50 sccm)
|style="background:WhiteSmoke; color:black"|
|
*O<sub>2</sub> (flow unknown)
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|style="background:WhiteSmoke; color:black"|
|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
*CF<sub>4</sub> (0-200 sccm)
|style="background:WhiteSmoke; color:black"|
| NA
*NA
| NA
|style="background:WhiteSmoke; color:black"|
*NA
 
|-
|-
|style="background:LightGrey; color:black"|Max. process power
! scope=row style="text-align: left;" | Process power
|style="background:WhiteSmoke; color:black"|
| 10-100 W (10-100%)
100 W (100%)
| 150-1000 W
|style="background:WhiteSmoke; color:black"|
| 150-1000 W
1000 W
| NA
|style="background:WhiteSmoke; color:black"|
| NA
1000 W
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*NA
 
|-
|-
|style="background:LightGrey; color:black"|Solvent
! scope=row style="text-align: left;" | Process solvent
|style="background:WhiteSmoke; color:black"|
| NA
*NA
| NA
|style="background:WhiteSmoke; color:black"|
| NA
*NA
|
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*NMP (Remover 1165)
*NMP (Remover 1165)
*Rinse in IPA
*IPA (rinsing agent)
|style="background:WhiteSmoke; color:black"|
|
*NMP (Remover 1165)
*NMP (Remover 1165)
*Rinse in IPA
*IPA (rinsing agent)
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate batch
|style="background:LightGrey; color:black"|Batch size
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1
*1 100 mm wafer
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1-25
*1-25 100 mm wafers
*150 mm wafer: 1-25
*1-25 150 mm wafers
*200 mm wafer: 1-25
*1-25 200 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1-25
*1-25 100 mm wafers
*150 mm wafer: 1-25
*1-25 150 mm wafers
*200 mm wafer: 1-25
*1-25 200 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*100 mm wafer: 1-25
*1 - 25 100 mm wafers
*150 mm wafer: 1-25
*1 - 25 150 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*100 mm wafer: 1-25
*1 - 25 100 mm wafers
*150 mm wafer: 1-25
*1 - 25 150 mm wafers
|-
|-
|style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Substrate materials
|style="background:WhiteSmoke; color:black"|
|
*Silicon, glass, and polymer substrates
*<span style="color:red">'''No polymer substrates'''</span><br>
*Film or pattern of all but Type IV
*Silicon substrates
|style="background:WhiteSmoke; color:black"|
*III-V substrates
*<b>No metals</b><br>
*Glass substrates
*<b>No metal oxides</b><br>
*Films, or patterned films, of any material except type IV (Pb, Te)
*<b>No III-V materials</b>
|
*Silicon, glass, and polymer substrates
*<span style="color:red">'''No metals'''</span><br>
*Film or pattern of photoresist/polymer
*<span style="color:red">'''No metal oxides'''</span><br>
|style="background:WhiteSmoke; color:black"|
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon, III-V, and glass substrates
*Silicon substrates
*Film or pattern of all but Type IV
*Glass substrates
|style="background:WhiteSmoke; color:black"|
*Polymer substrates
*<b>No metals</b><br>
*Films, or patterned films, of resists/polymers
*<b>No metal oxides</b><br>
|
*Silicon, glass, and polymer substrates
*Silicon substrates
*Film or pattern of photoresist/polymer
*III-V substrates
|style="background:WhiteSmoke; color:black"|
*Glass substrates
*Silicon and glass substrates
*Polymer substrates
*Film or pattern of all but Type IV
*Films, or patterned films, of any material except type IV (Pb, Te)
|-
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates (only if clean)
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


= Plasma Ashing process parameters=
= Plasma Ashing process parameters=


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{| class="wikitable"
|-
|-
 
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum]] !! Surface treatment !! Other ashing of organic material
|-style="background:silver; color:black"
|-
|
! scope=row style="text-align: left;" | Tool
! Photoresist stripping
| Plasma asher 4 & 5 || Plasma asher 3: Descum || Plasma asher 4 & 5 || Plasma asher 4 & 5 || Plasma asher 4 & 5
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
|-
! Surface treatment of plastic, ceramic and metal
! scope=row style="text-align: left;" | Process pressure
! Ashing of organic material
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|-  
 
|-style="background:whitesmoke; color:black"
!Process pressure
|1.3 mbar
|1.3 mbar  
|0.5-1.5 mbar  
|0.5-1.5 mbar
|-
|-
 
! scope=row style="text-align: left;" | Process gasses
|-style="background:silver; color:black"
|  
!Process gases
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|O<sub>2</sub>, CF<sub>4</sub>, N<sub>2</sub> or their mixtures
|
|O<sub>2</sub>
*O<sub>2</sub>
*N<sub>2</sub>
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
|-
 
! scope=row style="text-align: left;" | Process power
|-style="background:whitesmoke; color:black"
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
!Process power
|1000 W
|200 W
|150-1000 W
|1000 W or less for heat- sensitive materials
|-
|-
 
! scope=row style="text-align: left;" | Process time
|-style="background:silver; color:black"
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
!Process time
|5-90 minutes
|1-30 minutes
|seconds to minutes
|Between 0.5 and 20 hours, depending on the material
|-
|-
 
! scope=row style="text-align: left;" | Substrate batch
|-style="background:whitesmoke; color:black"
| 1-25 || 1-2 || 1-25 || 1-25 || 1-25
!Batch size
|1-25
|1-25
|1 wafer at a time
|1 wafer at a time, use a container, e.g Petri dish
|-
|}
 
<br clear="all" />
 
<!--
Typical process time for stripping in plasma asher 1 or 2:
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min
 
Typical process parameters:
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W
 
 
A typical descum process in plasma asher 1 or 2:
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min
 
 
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
 
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''
-->
 
==Process gas ratio for plasma asher 4 & 5==
[[File:PA_gas_mix_v3.png|320px|thumb|Ashing rate as function of gas mix ratio when processing a single 100 mm wafer and when processing a full boat with 25 wafers.|right]]
The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Process development tests found that a gas mix of 50% nitrogen gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
 
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
 
{| class="wikitable"
|-
!  !! Single substrate !! Full boat
|-
! scope=row| Test results
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
|-
! scope=row| Wafers
| 1 || 25
|-
! scope=row| Wafer size
| 100 mm || 100 mm
|-
! scope=row| Boat position
| Center of chamber || Center of chamber
|-
! scope=row| Test wafer position
| Center of boat || Center of boat
|-
! scope=row| Total gas flow rate
| 500 || 200
|-
! scope=row| Gas mix ratio
| Tested parameter || Tested parameter
|-
! scope=row| Chamber pressure
| 1.25 mbar || 1.3 mbar
|-
! scope=row| Power
| 1000 W || 1000 W
|-
! scope=row| Test processing time
| 2 minutes || 10 minutes
|-
! scope=row| Test average temperature
| 43°C || 47°C
|}
|}


<br clear="all" />
<br clear="all" />


==Process chamber pressure for plasma asher 4 & 5==
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
[[File:PA_chamber_pressure_v3.png|320px|thumb|Ashing rate as function of chamber pressure when processing a single substrate and when processing a full boat with 25 substrates.|right]]
The ashing rate is related to the chamber pressure during processing. Process development tests found that 1.3 mbar gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.


Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}


'''Single substrate:'''<br>
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
Test using a single 100 mm wafer in the center of the process chamber shows that 1.3 mbar gives the highest ashing rate.


Total gas flow rate: 500 sccm<br>
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: tested parameter<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
<br clear="all" />


'''Full boat:'''<br>
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 1.4 mbar gives the highest ashing rate.


Total gas flow rate: 200 sccm<br>
=Decommisioned tools=
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: tested parameter<br>
Power: 1000 W<br>
Processing time: 10 minutes<br>
Temperature (average): 43°C
<br clear="all" />
 
==Process gas flow rate for plasma asher 4 & 5==
[[File:PA_flowRate_v4.png|320px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers.|right]]
The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
 
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
 
'''Single substrate:'''<br>
Test using a single 100 mm wafer in the center of the process chamber shows that 200 sccm gives the highest ashing rate.
 
Total gas flow rate: tested parameter<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
<br clear="all" />
 
'''Full boat:'''<br>
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 200 sccm gives the highest ashing rate.
 
Total gas flow rate: tested parameter<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 10 minutes<br>
Temperature (average): 43°C
<br clear="all" />
 
==Process power for plasma asher 4 & 5==
[[File:PA_power_v3.png|320px|thumb|Ashing rate as function of microwave power.|right]]
The ashing rate is related to the power used during processing. Higher power increases ashing rate.
 
'''Single substrate:'''<br>
Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate.
 
Total gas flow rate: 200 sccm<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: 1.3 mbar<br>
Power: tested parameter<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
<br clear="all" />
 
==Process temperature for plasma asher 4 & 5==
[[File:PA_temperature_v2.png|320px|thumb|Ashing rate as function of temperature.|right]]
The ashing rate is related to the temperature during processing. Higher temperature increases ashing rate.
 
'''Single substrate:'''<br>
Test using a single 100 mm wafer in the center of the process chamber shows that increasing processing temperature gives increasing ashing rate.
 
Total gas flow rate: 200 sccm<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): tested parameter
<br clear="all" />
 
=Plasma Asher 1=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]


=Plasma Asher 2=
 
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
=Plasma Asher 3: Descum=
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
In this machine, only Oxygen and Nitrogen are used for processing.
<b>Typical process parameters:</b><br>
Process: Photoresist descumming<br>
Pressure: 0.2-0.8 mbar<br>
Gas: 45 sccm O<sub>2</sub><br>
Power: 100%<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
Other materials have not been tested.
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
===Process Information===
Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].
<br clear="all" />
<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
Diener Pico Plasma Asher for III-V materials.
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
<br clear="all" />
-->
=Plasma Asher 4=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
The Plasma Asher 4 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
*No metals allowed
*No metal oxides allowed
*No III-V materials allowed
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 4|Descum using plasma asher 4]]
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum|Descum]]
<br clear="all" />
=Plasma Asher 5=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 5 in cleanroom E-5.|right]]
The Plasma Asher 5 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Furthermore plasma processing using CF<sub>4</sub> in plasma asher 5 can be used for:
*Etching of glass and ceramic
*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si
*Removal of polyimide layers
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 5]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
<br clear="all" />
<br clear="all" />
=Resist Strip=
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]
This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''
<br clear="all" />
==Overview of wet bench 06 and 07==
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-style="background:silver; color:black"
|
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-
|-style="background:whitesmoke; color:black"
!General description'''
|Wet stripping of resist
|Lift-off process
|-
|-style="background:silver; color:black"
!Chemical solution
|NMP Remover 1165
|NMP Remover 1165
|-
|-style="background:whitesmoke; color:black"
!Process temperature
|Up to 65°C
|Up to 65°C
|-
|-style="background:silver; color:black"
!Batch size
|
1 - 25 wafers
|
1 - 25 wafers
|-
|-style="background:whitesmoke; color:black"
!Size of substrate
|
*100 mm wafers
*150 mm wafers
|
*100 mm wafers
*150 mm wafers
|-
|-style="background:silver; color:black"
!Allowed materials
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
|
All metals except Type IV (Pb, Te)
|-
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Strip"