Jump to content

Specific Process Knowledge/Lithography/Strip: Difference between revisions

VisualWikitext
Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
Created page with "==Plasma asher 1 - ''All purpose''== 322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3. The Plasma Asher1( 300 auto load model) can be u..."
 
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,893 edits
 
(300 intermediate revisions by 11 users not shown)
Line 1: Line 1:
==Plasma asher 1 - ''All purpose''==
{{cc-nanolab}}
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3.]]


The Plasma Asher1( 300 auto load model) can be used for the following process:
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''


*Photoresist stripping
[[Category: Equipment|Lithography strip]]
*Surface cleaning after storage
[[Category: Lithography|Strip]]
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivating layers and masks
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers


The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
__TOC__


 
= Strip Comparison Table =
===Overview of typical processes===
{| class="wikitable"
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Photoresist stripping
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-
|'''Process pressure'''
|0.8- 1.0mbar
|0.5- 1.0mbar
|0.8-1.5mbar
|-
|-
|'''Process gases'''
!
|O<sub>2</sub>, N<sub>2</sub>
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4 (Clean)]]
|O<sub>2</sub>
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
! [[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
|-
|'''Process power'''
! scope=row style="text-align: left;" |  Purpose
|600-1000W
| Resist descum
|150-300W
|
|1000W or less for heat- sensitive materials
*Resist stripping
*Resist descum
|
*Resist stripping
*Resist descum
| Resist stripping
| Metal lift-off
|-
|-
|'''Process  time'''
! scope=row style="text-align: left;" | Method
|5-60min, depending of photoresist thickness
| Plasma ashing
|a few seconds to a few minutes
| Plasma ashing
|Between 0.5 and 20 hours, depending on the material
| Plasma ashing
| Solvent & ultrasonication
| Solvent & ultrasonication
|-
|-
|'''Batch size'''
! scope=row style="text-align: left;" | Process gasses
|1-10 wafers at a time
| O<sub>2</sub> (50 sccm)
|1 wafer at a time
|
|1 wafer at a time, use a container: Petri dish, evaporating dish weighing dish, beaker, etc.
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
| NA
| NA
|-
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
| NA
| NA
|-
|-
|'''Size of substrate'''
! scope=row style="text-align: left;" | Process solvent
|2"-6"
| NA
|2"-6"
| NA
|2"-6"
| NA
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
|-
|'''Allowed materials'''
! scope=row style="text-align: left;" | Substrate batch
|All
|
|All
*Chips: several
|All
*50 mm wafer: several
 
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
! scope=row style="text-align: left;" | Substrate materials
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates (only if clean)
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


= Plasma Ashing process parameters=


 
{| class="wikitable"
 
|-
A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum]] !! Surface treatment !! Other ashing of organic material
 
|-
==Plasma asher 2 - ''Clean/no metals''==
! scope=row style="text-align: left;" | Tool
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]
| Plasma asher 4 & 5 || Plasma asher 3: Descum || Plasma asher 4 & 5 || Plasma asher 4 & 5 || Plasma asher 4 & 5
 
|-
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
! scope=row style="text-align: left;" | Process pressure
 
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
|-
 
! scope=row style="text-align: left;" | Process gasses
The typical process parameters when operating the equipment:
|
*Photeresist stripping
*O<sub>2</sub> (100 sccm)
Pressure: 0.8 - 1.0 mbar
*N<sub>2</sub> (100 sccm)
 
|
Gas: O2
*O<sub>2</sub> (45 sccm)
 
|
Power: 600 - 1000 watts
*O<sub>2</sub> (100 sccm)
 
*N<sub>2</sub> (100 sccm)
Time: 5 -30 min., depending on photoresist type and thickness
|
 
*O<sub>2</sub>
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.
*N<sub>2</sub>
 
*CF<sub>4</sub>
A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
|
At a load at 2 Fused silicawafers resist removed 0.01-01,5um
*O<sub>2</sub>
 
|-
The other materials have not been tested yet.
! scope=row style="text-align: left;" | Process power
 
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
==Acetone strip with ultrasound==
|-
{| border="1" cellspacing="0" cellpadding="4" align="right"
! scope=row style="text-align: left;" | Process time
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
|-
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1-25 || 1-25
|}
|}
This acetone strip is only for wafers without metal and SU-8!
There is two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the  resists remains.
'''Here are the main rules for acetone strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound  and strip them for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping .


<br clear="all" />
<br clear="all" />


==Lift-off wet bench==
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
[[Image:Acetone_lift-off.jpg|300x300px|thumb|Acetone lift-off: positioned in cleanroom 3]]
This bench is only for wafers with metal!


Here are the main rules for lift-off bench use:
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
*Place the wafers in a dedicated wafer holder.
*Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
*Rinse your wafers for 4-5 min. in running water after stripping.


Find more info about the lift-off process here: [[Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process]]
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
<br clear="all" />


==Overview of acetone benches==
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}


{| border="2" cellspacing="0" cellpadding="4" align="left"
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}
!
! Acetone strip
! Lift-off
|-
|'''General description'''
|
wet stripping of resist
|
lift-off process
|-
|'''Chemical solution'''
|CH<sub>3</sub>COCH<sub>3</sub>
|CH<sub>3</sub>COCH<sub>3</sub>
|-
|'''Process temperature'''
|20 <sup>o</sup>C


|20 <sup>o</sup>C
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


|-
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]


|'''Batch size'''
|
1-25 wafers at a time
|
1-25 wafer at a time
|-
|'''Size of substrate'''
|
4" wafers
|
4" wafers
|-
|'''Allowed materials'''
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride


|
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
*All metals


|-
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
|}
<br clear="all" />
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Strip"