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<!--Checked for updates on 2/10-2020 - ok/jmli -->
<!--Checked for updates on 2/10-2020 - ok/jmli -->
<!--Checked for updates on 5/2-2026 - ok/jmli -->


==Pegasus 3 - 150mm silicon etching==
==Pegasus 3 - 150mm silicon etching==
 
{{Contentbydryetch}}
'''The tool is ready for user training. '''
[[Image:05x.jpg |frame|left|x300px|The Pegasus 3 cassette station (left), operator station (center) and support computer with Picoscope process monitoring.{{photo1}} ]]
 
[[Image:05x.jpg |frame|left|x300px|The Pegasus 3 cassette station (left), operator station (center) and support computer with Picoscope process monitoring. ]]




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'''[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/StandardRecipes|Standard recipes]]'''
'''Standard recipes'''
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/DREM | The DREM recipes 0.5 kW and 0.2 kW ]]
 
 


*[[Specific Process Knowledge/Etch/DRIE-Pegasus 4/Barc etch |Barc etch]]


'''Hardware changes'''
'''Hardware changes'''
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Compared to a standard SPTS DRIE Pegasus chamber, the Pegasus 3 has had the same modifications as the Pegasus 1 with the exception of the Claritas EPD system. The changes are listed below.
Compared to a standard SPTS DRIE Pegasus chamber, the Pegasus 3 has had the same modifications as the Pegasus 1 with the exception of the Claritas EPD system. The changes are listed below.


*[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|Change of Pegasus 1 showerhead in 2019]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|High flow plenum upgrade]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope|Addition of Picoscope oscilloscope system for process monitoring]]


*[[Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope|Addition of Picoscope oscilloscope system for process monitoring on Pegasus 1 in February 2019]]
The original (fast switching and with a maximum flow of 1200 sccm) SF<sub>6</sub> MFC was causing problems for a long a time so it was replaced by two new MFC's:
* SF6-1: Fast switching MFC for Bosch processes with a maximum flow rate of 600 sccm. It sits in the position of the old 1200 sccm MFC on top of the plasma source.
* SF6-2: Normal MFC for continuous processes with a maximum flow rate of 100 sccm. It is installed in the gas cabinet next to the Ar MFC.




=== Other etch processes ===
=== Other etch processes ===


*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch|Continuous nanostructure etches including nano1.42]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch|Etch processes with DUV masks]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Barc|BARC etches]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Isotropic|Isotropic etches]]


More processes, such as for DUV resist, are currently being developed, but they are not quite 'ready for publication' at LabAdviser so please contact Jonas (mailto:jmli@dtu.dk) for more information.
More processes, such as for DUV resist, are currently being developed, but they are not quite 'ready for publication' at LabAdviser so please contact Jonas (mailto:jmli@dtu.dk) for more information.
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  <!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/VeeryDeeep| Very deep etching]] -->
  <!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/VeeryDeeep| Very deep etching]] -->
*[[/SiO2 etch|Etch of very thin layers of SiO2]]


=== Wafer bonding ===
=== Wafer bonding ===
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