Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3: Difference between revisions
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'''Feedback to this page: | '''Feedback to this page: | ||
[mailto:labadviser@ | [mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-3 click here]''' | ||
[[Category: Equipment |Etch DRIE]] | [[Category: Equipment |Etch DRIE]] | ||
[[Category: Etch (Dry) Equipment|DRIE]] | [[Category: Etch (Dry) Equipment|DRIE]] | ||
<!--Checked for updates on 2/10-2020 - ok/jmli --> | |||
<!--Checked for updates on 5/2-2026 - ok/jmli --> | |||
==Pegasus 3 - 150mm silicon etching== | |||
{{Contentbydryetch}} | |||
[[Image:05x.jpg |frame|left|x300px|The Pegasus 3 cassette station (left), operator station (center) and support computer with Picoscope process monitoring.{{photo1}} ]] | |||
'''The | |||
''' | The user manual(s) is available, technical information and contact information can be found in LabManager: | ||
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=455| LabManager] | |||
== Process information == | |||
'''Standard recipes''' | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/DREM | The DREM recipes 0.5 kW and 0.2 kW ]] | |||
'''Hardware changes''' | |||
Compared to a standard SPTS DRIE Pegasus chamber, the Pegasus 3 has had the same modifications as the Pegasus 1 with the exception of the Claritas EPD system. The changes are listed below. | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange|High flow plenum upgrade]] | |||
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope|Addition of Picoscope oscilloscope system for process monitoring]] | |||
The original (fast switching and with a maximum flow of 1200 sccm) SF<sub>6</sub> MFC was causing problems for a long a time so it was replaced by two new MFC's: | |||
* SF6-1: Fast switching MFC for Bosch processes with a maximum flow rate of 600 sccm. It sits in the position of the old 1200 sccm MFC on top of the plasma source. | |||
* SF6-2: Normal MFC for continuous processes with a maximum flow rate of 100 sccm. It is installed in the gas cabinet next to the Ar MFC. | |||
=== Other etch processes === | |||
More processes, such as for DUV resist, are currently being developed, but they are not quite 'ready for publication' at LabAdviser so please contact Jonas (mailto:jmli@dtu.dk) for more information. | |||
<!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/slopedsidewalls|Etches that produce positively sloped sidewalls for imprinting purposes]] --> | |||
<!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/Waferthinning| Maskless reduction of wafer thicknesses]] --> | |||
<!-- *[[Specific Process Knowledge/Etch/DRIE-Pegasus/VeeryDeeep| Very deep etching]] --> | |||
*[[/SiO2 etch|Etch of very thin layers of SiO2]] | |||
=== Wafer bonding === | |||
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]]. | |||
'''Internal Nanolab Process log for Pegasus 3''' | |||
Process log at Nanolab [http://labintra.nanolab.dtu.dk/index.php/Main_Page/Process_Logs/jmli/Pegasus3] | |||