Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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===Results with SiO2_res_10 and with with the electro magnets on=== | ===Results with SiO2_res_10 and with with the electro magnets on=== | ||
[[File:Contour Plot Y31 EM_02_30 white to blue.jpg|400px|thumb|left|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]] | The SiO2:res_10 recipe was tested with the electromagnets on but it seems to no no good for the results.[[File:Contour Plot Y31 EM_02_30 white to blue.jpg|400px|thumb|left|Etched with EM:02/30 for 2min, average etch rate: 275 nm/min +- 4.5%. The electro magnets changed the uniformity pattern and made it a bit worse ]] | ||
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Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip, which is positioned in the center of a 6" wafer. The Etch profile is more angled. | Using the electromagnetic coil on the recipe SiO2_res_10 gave higher etch rate on this chip, which is positioned in the center of a 6" wafer. The Etch profile is more angled. | ||
*Removing the H2 from the recipe to get less redeposition | *Removing the H2 from the recipe to get less redeposition at lower platen power (200W), EM:02/30A. Se result below. This gave significantly lower etch rate and no etching in the smallest openings. | ||
<gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5"> | <gallery caption="Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min " perrow="5"> | ||