Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
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|Etch rate of SiO2 | |Etch rate of SiO2 | ||
|'''~42nm/min [41-43 nm/min over a 6" wafer] | |'''~42nm/min [41-43 nm/min over a 6" wafer] | ||
|'''13.7-14.7 nm/min [4" on carrier] | |'''13.7-14.7 nm/min [4" on carrier] | ||