Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
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|Etch rate of SiO2 | |Etch rate of SiO2 | ||
|'''~42nm/min [41-43 nm/min over a 6" wafer] | |'''~42nm/min [41-43 nm/min over a 6" wafer] | ||
|'''13.7-14.7 nm/min [4" on carrier] | |'''13.7-14.7 nm/min [4" on carrier] | ||
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|Tested etch time without burning the resist | |Tested etch time without burning the resist | ||
|3 min | |3 min (6 min => resist burned) | ||
|30 min | |30 min | ||
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==Etch Profile SEM images== | ==Etch Profile SEM images== | ||
<gallery caption="Profile of etch for 'Slow Etch2' 12 min, 100mm wafer on 150mm carrier with double side polyimide tape (capton)" widths="300px done by bghe, DTU Nanolab" heights="300px" widths="400px" perrow="3"> | <gallery caption="Profile of etch for 'Slow Etch2' 12 min, 100mm wafer on 150mm carrier with double side polyimide tape (capton), Si3N4 from LPCVD" widths="300px done by bghe, DTU Nanolab" heights="300px" widths="400px" perrow="3"> | ||
File:C08507_01.jpg | File:C08507_01.jpg | ||
File:C08507_02.jpg | File:C08507_02.jpg | ||