Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions

VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Created page with "=The slow etch= The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape"
 
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
 
(33 intermediate revisions by the same user not shown)
Line 1: Line 1:
=The slow etch=  
=The slow etch=  
'''''This work is done by Berit Herstrøm @DTU Nanolab, is nothing else is stated''''' <br>
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''Slow Etch'''
|Recipe name: '''Slow Etch2'''
 
|-
|Coil Power [W]
|350
|200
|-
|Platen Power [W]
|25
|50
|-
|Platen temperature [<sup>o</sup>C]
|20
|20
|-
|H2 flow [sccm]
|15
|15
|-
|CF<sub>4</sub> flow [sccm]
|30
|30
|-
|Pressure [mTorr]
|3
|10
|-
|}
{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!'''Slow Etch'''
!'''Slow Etch2'''
|-
|Etch of SRN
|'''~43nm/min [measured 39-50 nm/min over a 6" wafer]
|'''23-25 nm/min [4" on carrier]]
|-
|Etch rate of Si3N4
|'''~49 nm/min [4" on carrier]
|'''24-26 nm/min [4" on carrier]
|-
|Etch rate of SiO2
|'''~42nm/min [41-43 nm/min over a 6" wafer]
|'''13.7-14.7 nm/min [4" on carrier]
|-
|Etch rate in Si
|'''ñm/min
|'''11-13 nm/min (10% load, 4" wafer on 6" carrier)
|-
|Etch rate of Mir resist
|'''~nm/min
|'''~17 nm/min
|-
|Tested etch time without burning the resist
|3 min (6 min => resist burned)
|30 min
|-
|Profile [<sup>o</sup>]
|
|
|-
|}
==Etch Profile SEM images==
<gallery caption="Profile of etch for 'Slow Etch2' 12 min, 100mm wafer on 150mm carrier with double side polyimide tape (capton), Si3N4 from LPCVD" widths="300px done by bghe, DTU Nanolab" heights="300px" widths="400px" perrow="3">
File:C08507_01.jpg
File:C08507_02.jpg
File:C08507_04.jpg
</gallery>
==Etch Uniformity maps==
<br clear="all" />
<gallery caption="Map of etch rate measurements for 'Slow Etch'" widths="300px" heights="300px" perrow="2">
File:contour plot for etchrate of slow etch in SiO2.JPG| Etch rate map of SiO2 etch on 6" wafer
File:contour plot for etchrate of slow etch in SRN.JPG| Etch rate map of SRN etch on 6" wafer
</gallery>
<gallery caption="Map of etch rate measurements for 'Slow Etch2'" widths="300px" heights="300px" perrow="2">
File:Contour Plot etch rates Si3N4.jpg| Etch rate map of Si3N4 etch on 4" wafer (on 6" carrier)
File:Contour Plot etch rates SRN.jpg| Etch rate map of SRN etch on 4" wafer (on 6" carrier)
File:Contour Plot etch rates SiO2.jpg|Etch rate map of SiO2 etch on 4" wafer (on 6" carrier)
File:Contour Plot etch rates Si.jpg|Etch rate map of Si etch on 4" wafer (on 6" carrier)
</gallery>
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow_etch"