Specific Process Knowledge/Lithography/CSAR: Difference between revisions

← Older edit

VisualWikitext

@@ Line 1: / Line 1: @@
 Simple e-beam pattern in this resist has been tested, the results showed on this page. If you have questions to the process or wish to use this e-beam resist, please contact [mailto:lithography@nanolab.dtu.dk lithography] at DTU Nanolab.
 == Spin Curves ==
@@ Line 190: / Line 186: @@
 |549
 |-
 |}
-<br>
-<br>
-<br>
 == Contrast Curve ==
@@ Line 240: / Line 231: @@
 |}
-==Cross section dose lines==
+==Dose to size==
+Small features need a comparatively higher dose then big features and hence it can be useful to map out the dose and size dependency. Below is a set of cross sectional images of 100, 50 and 20 nm lines written 500, 250 and 180 nm resist at doses from 200 to 600 µC/cm<sup>2</sup>.
 {| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
@@ Line 263: / Line 255: @@
 |-
 | colspan="1" style="text-align:center;|
-Cross section SEM images of 500 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
+Cross section SEM images of 250 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
 |}
@@ Line 275: / Line 267: @@
 |-
 | colspan="1" style="text-align:center;|
-Cross section SEM images of 250 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
+Cross section SEM images of 180 nm AR-P 6200.09 exposed at 200-600 µC/cm<sup>2</sup>. Top image is 100 nm lines, center image is 50 nm lines, bottom image is 20 nm lines. Au coated for SEM imaging.
 |}