Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions
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== Hardware and option comparison of the dry etchers == | == Hardware and option comparison of the dry etchers == | ||
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The table below compares the hardware and the options. | The table below compares the hardware and the options. | ||
{| border="2" cellspacing="0" cellpadding="0" align="left" | {| border="2" cellspacing="0" cellpadding="0" align="left" | ||
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! style="background:silver; color:black" colspan="4" align="center"| [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasi]] | ! style="background:silver; color:black" colspan="4" align="center"| [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasi]] | ||
! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]] | ! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]] | ||
! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]] | ! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]] | ||
! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ! style="background:silver; color:black" rowspan="2" align="center"| [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ||
|- valign="top" | |- valign="top" | ||
! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-1|Pegasus 1]] | ! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-1|Pegasus 1]] | ||
! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|Pegasus 2]] | ! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|Pegasus 2]] | ||
! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-3|Pegasus 3]] | ! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-3|Pegasus 3]] | ||
! style="background:silver; color:black"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4|Pegasus 4]] | ! style="background:silver; color:black" align="center"| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4|Pegasus 4]] | ||
|- valign="top" | |- valign="top" | ||
! rowspan="2" style="background:silver; color:black" |Purpose | ! rowspan="2" style="background:silver; color:black" |Purpose | ||
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| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 4" wafers | | style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 4" wafers | ||
| style="background:WhiteSmoke; color:black"| Silicon etching of 4" wafers | | style="background:WhiteSmoke; color:black"| Silicon etching of 4" wafers | ||
| style="background:WhiteSmoke; color:black"| Research tool into silicon etching | | style="background:WhiteSmoke; color:black"| Research tool into silicon etching - only a few special recipes! | ||
| style="background:WhiteSmoke; color:black"| Silicon etching of 6" wafers on 6" wafers | | style="background:WhiteSmoke; color:black"| Silicon etching of 6" wafers on 6" wafers | ||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides | | style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 6" wafers | ||
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo | | style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it! | ||
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs. | |||
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | Etching of SiO2 and SiN on III-V materials | ||
| style="background:WhiteSmoke; color:black"| Physical Etching of all materials | | style="background:WhiteSmoke; color:black"| Physical Etching of all materials | ||
|- valign="top" | |- valign="top" | ||
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| style="background:lightgrey; color:black" | Backup silicon etcher | | style="background:lightgrey; color:black" | Backup silicon etcher | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
| style="background:lightgrey; color:black" colspan="2"| | | style="background:lightgrey; color:black" colspan="2"| | ||
| style="background:lightgrey; color:black" | Silicon etcher | | style="background:lightgrey; color:black" | Silicon etcher | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
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| style="background:WhiteSmoke; color:black" colspan="4" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator | | style="background:WhiteSmoke; color:black" colspan="4" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator | ||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | | style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | ||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | | style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | ||
| style="background:WhiteSmoke; color:black" | Ion beam etcher - sputter etches with argon ions | | style="background:WhiteSmoke; color:black" | Ion beam etcher - sputter etches with argon ions | ||
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| style="background:lightgrey; color:black" colspan="4" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C | | style="background:lightgrey; color:black" colspan="4" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C | ||
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| style="background:WhiteSmoke; color:black" colspan="3" | Electrostatic clamping (TDESC)<br> Wafer size 6" | | style="background:WhiteSmoke; color:black" colspan="3" | Electrostatic clamping (TDESC)<br> Wafer size 6" | ||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 6" | | style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 6" | ||
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4" | | style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4" | ||
| style="background:WhiteSmoke; color:black" | Mechanical clamping <br> Wafer sizes 2"/4"/6"/8" | | style="background:WhiteSmoke; color:black" | Mechanical clamping <br> Wafer sizes 2"/4"/6"/8" | ||
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| He | | He | ||
|} | |} | ||
|style="background:lightgrey; color:black" | |style="background:lightgrey; color:black" | | ||
{| | |||
| SF<sub>6</sub> | |||
| O<sub>2</sub> | |||
| C<sub>4</sub>F<sub>8</sub> | |||
|- | |||
| Ar | |||
|} | |||
|style="background:lightgrey; color:black" | | |||
{| | |||
| SF<sub>6</sub> | |||
| O<sub>2</sub> | |||
| N<sub>2</sub> | |||
|- | |||
| Ar | |||
| He | |||
|} | |||
|style="background:lightgrey; color:black" | | |||
{| | {| | ||
| SF<sub>6</sub> | | SF<sub>6</sub> | ||
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| HBr | | HBr | ||
|} | |} | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
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* Coil generator | * Coil generator | ||
* Platen generator | * Platen generator | ||
| style="background:WhiteSmoke; color:black" colspan=" | | style="background:WhiteSmoke; color:black"| | ||
* Coil generator | |||
* Platen generator | |||
* Low frequency platen generator | |||
| style="background:WhiteSmoke; color:black"| | |||
* Platen generator | |||
* Low frequency platen generator | |||
| style="background:WhiteSmoke; color:black" colspan="2"| | |||
* Coil generator | * Coil generator | ||
* Platen generator | * Platen generator | ||
| Line 179: | Line 193: | ||
* Coil generator | * Coil generator | ||
* Platen generator | * Platen generator | ||
| style="background:WhiteSmoke; color:black" | | | style="background:WhiteSmoke; color:black" | | ||
* Coil generator | * Coil generator | ||
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| style="background:lightgrey; color:black" colspan="2"| Loading via two cassette loading stations pumped down at vacuum | | style="background:lightgrey; color:black" colspan="2"| Loading via two cassette loading stations pumped down at vacuum | ||
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | | style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | ||
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | | style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock | ||
| style="background:lightgrey; color:black" | Automatic loading via load lock | | style="background:lightgrey; color:black" | Automatic loading via load lock | ||
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* Parameter ramping | * Parameter ramping | ||
* Optical endpoint detection | * Optical endpoint detection | ||
| style="background:WhiteSmoke; color:black" | | | style="background:WhiteSmoke; color:black" | | ||
* Parameter ramping | * Parameter ramping | ||
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* SIMS endpoint detection | * SIMS endpoint detection | ||
|-valign="top" | |-valign="top" | ||
! style="background:silver; color:black"| Allowed materials | |||
! style="background:silver; color:black" rowspan="2"| Allowed materials | |||
! style="background:lightgrey; color:black" | Materials | |||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon, Silicon oxide, silicon nitride | * Silicon, Silicon oxide, silicon nitride | ||
| Line 267: | Line 277: | ||
* Al, Cr, Ti, W, Mo, Nb | * Al, Cr, Ti, W, Mo, Nb | ||
* Resists | * Resists | ||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon, Silicon oxide, silicon nitride | * Silicon, Silicon oxide, silicon nitride | ||
| Line 283: | Line 286: | ||
* Resists (at low temperature processing) | * Resists (at low temperature processing) | ||
|style="background:lightgrey; color:black" | | |style="background:lightgrey; color:black" | | ||
* Almost any material | * Almost any material | ||
|- | |||
! style="background:WhiteSmoke; color:black" | Cross contamination sheet | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=105 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=115 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=265 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=398 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=455 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=266 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=268 Link] | |||
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=267 Link] | |||
|- | |- | ||
|} | |} | ||